AT49BV008AT ATMEL Corporation, AT49BV008AT Datasheet
AT49BV008AT
Manufacturer Part Number
AT49BV008AT
Description
Manufacturer
ATMEL Corporation
Specifications of AT49BV008AT
Case
QFN
Date_code
07+
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Features
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Description
The AT49BV/LV008A(T) and AT49BV/LV8192A(T) are 3-volt, 8-megabit Flash memo-
ries organized as 1,048,576 words of 8 bits each or 512K words of 16 bits each.
Manufactured with Atmel’s advanced nonvolatile CMOS technology, the devices offer
access times to 70 ns with power dissipation of just 67 mW at 2.7V read. When dese-
lected, the CMOS standby current is less than 50 µA.
Pin Configurations
Pin Name
A0 - A18
CE
OE
WE
RESET
RDY/BUSY
VPP
I/O0 - I/O14
I/O15 (A-1)
BYTE
NC
Single-voltage Read/Write Operation: 2.7V to 3.6V (BV), 3.0V to 3.6V (LV)
Fast Read Access Time – 70 ns
Internal Erase/Program Control
Sector Architecture
Fast Sector Erase Time – 10 seconds
Byte-by-byte or Word-by-word Programming – 30 µs Typical
Hardware Data Protection
Data Polling for End of Program Detection
Low Power Dissipation
Typical 10,000 Write Cycles
– One 8K Word (16K Bytes) Boot Block with Programming Lockout
– Two 4K Word (8K Bytes) Parameter Blocks
– One 496K Word (992K Bytes) Main Memory Array Block
– 25 mA Active Current
– 50 µA CMOS Standby Current
Function
Addresses
Chip Enable
Output Enable
Write Enable
Reset
Ready/Busy Output
VPP can be left unconnected or connected to VCC, GND, 5V or
12V. The input has no effect on the operation of the device.
Data Inputs/Outputs
I/O15 (Data Input/Output, Word Mode)
A-1 (LSB Address Input, Byte Mode)
Selects Byte or Word Mode
No Connect
8-megabit
(1M x 8/
512K x 16)
Flash Memory
AT49BV008A
AT49BV008AT
AT49LV008A
AT49LV008AT
AT49BV8192A
AT49BV8192AT
AT49LV8192A
AT49LV8192AT
Rev. 1049K–FLASH–11/02
1
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