AT45DB041DSU ATMEL Corporation, AT45DB041DSU Datasheet

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AT45DB041DSU

Manufacturer Part Number
AT45DB041DSU
Description
Manufacturer
ATMEL Corporation
Datasheet

Specifications of AT45DB041DSU

Case
SOP
Date_code
07+

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Part Number:
AT45DB041DSU
Manufacturer:
ATMEL
Quantity:
7 394
Features
1. Description
The AT45DB041D is a 2.5V or 2.7V, serial-interface Flash memory ideally suited for a
wide variety of digital voice-, image-, program code- and data-storage applications.
The AT45DB041D supports RapidS serial interface for applications requiring very
high speed operations. RapidS serial interface is SPI compatible for frequencies up to
66 MHz. Its 4,325,376 bits of memory are organized as 2,048 pages of 256 bytes or
264 bytes each. In addition to the main memory, the AT45DB041D also contains two
SRAM buffers of 256/264 bytes each. The buffers allow the receiving of data while a
page in the main Memory is being reprogrammed, as well as writing a continuous data
stream. EEPROM emulation (bit or byte alterability) is easily handled with a self-con-
tained three step read-modify-write operation. Unlike conventional Flash memories
that are accessed randomly with multiple address lines and a parallel interface, the
DataFlash uses a RapidS serial interface to sequentially access its data. The simple
sequential access dramatically reduces active pin count, facilitates hardware layout,
Single 2.5V or 2.7V to 3.6V Supply
RapidS
User Configurable Page Size
Page Program Operation
Flexible Erase Options
Two SRAM Data Buffers (256/264 Bytes)
Continuous Read Capability through Entire Array
Low-power Dissipation
Hardware and Software Data Protection Features
Sector Lockdown for Secure Code and Data Storage
Security: 128-byte Security Register
JEDEC Standard Manufacturer and Device ID Read
100,000 Program/Erase Cycles Per Page Minimum
Data Retention – 20 Years
Industrial Temperature Range
Green (Pb/Halide-free/RoHS Compliant) Packaging Options
– SPI Compatible Modes 0 and 3
– 256 Bytes per Page
– 264 Bytes per Page
– Intelligent Programming Operation
– 2,048 Pages (256/264 Bytes/Page) Main Memory
– Page Erase (256 Bytes)
– Block Erase (2 Kbytes)
– Sector Erase (64 Kbytes)
– Chip Erase (4 Mbits)
– Allows Receiving of Data while Reprogramming the Flash Array
– Ideal for Code Shadowing Applications
– 7 mA Active Read Current Typical
– 25 µA Standby Current Typical
– 5 µA Deep Power-down Typical
– Individual Sector
– Individual Sector
– 64-byte User Programmable Space
– Unique 64-byte Device Identifier
®
Serial Interface: 66 MHz Maximum Clock Frequency
4-megabit
2.5-volt or
2.7-volt
DataFlash
AT45DB041D
3595J–DFLASH–08/07
®

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