AT29BV040A25TC ATMEL Corporation, AT29BV040A25TC Datasheet

AT29BV040A25TC

Manufacturer Part Number

AT29BV040A25TC

Description

Manufacturer

ATMEL Corporation

Datasheet

1.AT29BV040A-25TI.pdf (16 pages)

Specifications of AT29BV040A25TC

Case

TSOP

Date_code

06+

Current page: 1 of 16
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Features

•

1. Description

The AT29BV040A is a 3-volt-only in-system Flash Programmable and Erasable Read

Only Memory (PEROM). Its 4 megabits of memory is organized as 524,288 words by

8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS EEPROM technology,

the device offers access times to 200 ns, and a low 54 mW power dissipation. When

the device is deselected, the CMOS standby current is less than 40 µA. The device

endurance is such that any sector can be written to in excess of 10,000 times. The

programming algorithm is compatible with other devices in Atmel’s 2.7-volt-only Flash

memories.

To allow for simple in-system reprogrammability, the AT29BV040A does not require

high input voltages for programming. The device can be operated with a single 2.7V to

3.6V supply. Reading data out of the device is similar to reading from an EPROM.

Reprogramming the AT29BV040A is performed on a sector basis; 256 bytes of data

are loaded into the device and then simultaneously programmed.

During a reprogram cycle, the address locations and 256 bytes of data are captured at

microprocessor speed and internally latched, freeing the address and data bus for

other operations. Following the initiation of a program cycle, the device will automati-

cally erase the sector and then program the latched data using an internal control

timer. The end of a program cycle can be detected by DATA polling of I/O7. Once the

end of a program cycle has been detected, a new access for a read or program can

begin.

Single Supply Voltage, Range 2.7V to 3.6V

Single Supply for Read and Write

Software Protected Programming

Fast Read Access Time – 200 ns

Low Power Dissipation

Sector Program Operation

Two 16K Bytes Boot Blocks with Lockout

Fast Sector Program Cycle Time – 20 ms Max.

Internal Program Control and Timer

DATA Polling for End of Program Detection

Minimum Endurance 10,000 Cycles

CMOS and TTL Compatible Inputs and Outputs

Commercial and Industrial Temperature Ranges

Green (Pb/Halide-free) Packaging Option

– 15 mA Active Current

– 40 µA CMOS Standby Current

– Single Cycle Reprogram (Erase and Program)

– 2048 Sectors (256 Bytes/Sector)

– Internal Address and Data Latches for 256 Bytes

4-megabit

(512K x 8)

Single 2.7-volt

Battery-Voltage

Flash Memory

AT29BV040A

0383I–FLASH–7/06

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