AT52BR1664 ATMEL Corporation, AT52BR1664 Datasheet

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AT52BR1664

Manufacturer Part Number
AT52BR1664
Description
Manufacturer
ATMEL Corporation
Datasheet

Specifications of AT52BR1664

Date_code
03+
Packing_info
BGA

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Features
Flash
SRAM
Device Number
AT52BR1662(T)
AT52BR1664(T)
16-megabit (x16) Flash and 2-megabit/4-megabit SRAM
2.7V to 3.3V Operating Voltage
Low Operating Power
Industrial Temperature Range
2.7V to 3.3V Read/Write
Access Time – 70 ns, 90 ns
Sector Erase Architecture
Fast Word Program Time – 20 µs
Fast Sector Erase Time – 300 ms
Suspend/Resume Feature for Erase and Program
Low-power Operation
Data Polling, Toggle Bit, Ready/Busy for End of Program Detection
VPP Pin for Write Protection and Accelerated Program/Erase Operations
RESET Input for Device Initialization
Sector Lockdown Support
Top/Bottom Boot Block Configuration
128-bit Protection Register
2-megabit (128K x 16)/4-megabit (256K x 16)
2.7V to 3.3V V
70 ns Access Time
Fully Static Operation and Tri-state Output
1.2V (Min) Data Retention
– 40 mA Operating Current (Maximum)
– 50 µA Standby Current (Maximum)
– Thirty-one 32K Word (64K Byte) Sectors with Individual Write Lockout
– Eight 4K Word (8K Byte) Sectors with Individual Write Lockout
– Supports Reading and Programming from Any Sector by Suspending Erase of a
– Supports Reading Any Word by Suspending Programming of Any Other Word
– 30 mA Active
– 10 µA Standby
Different Sector
CC
Operating Voltage
Flash Configuration
16M (1M x 16)
16M (1M x 16)
SRAM Configuration
2M (128K x 16)
4M (256K x 16)
16-megabit
Flash +
2-megabit/
4-megabit
SRAM Stack
Memory
AT52BR1662(T)
AT52BR1664(T)
Rev. 2212C–STKD–09/02
1

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