MRF18090A Freescale Semiconductor, Inc, MRF18090A Datasheet

MRF18090A

Manufacturer Part Number

MRF18090A

Description

Manufacturer

Freescale Semiconductor, Inc

Datasheets

1.MRF18090A.pdf (8 pages)

2.MRF18090A.pdf (8 pages)

Specifications of MRF18090A

Date_code

08+

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Meier Automation Equipment Co., Limited

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MOTOROLA/摩托罗拉

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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

The RF MOSFET Line

RF Power Field Effect Transistor

N - Channel Enhancement - Mode Lateral MOSFET

from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

applications. To be used in Class AB for GSM and GSM EDGE cellular radio

applications.

• GSM and GSM EDGE Performances, Full Frequency Band

• Internally Matched, Controlled Q, for Ease of Use

• High Gain, High Efficiency and High Linearity

• Integrated ESD Protection

• Designed for Maximum Gain and Insertion Phase Flatness

• Capable of Handling 10:1 VSWR, @ 26 Vdc, 90 Watts CW Output Power

• Excellent Thermal Stability

• Characterized with Series Equivalent Large - Signal Impedance Parameters

• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

MAXIMUM RATINGS

THERMAL CHARACTERISTICS

ESD PROTECTION CHARACTERISTICS

REV 5

Motorola, Inc. 2004

MOTOROLA RF DEVICE DATA

Drain - Source Voltage

Gate - Source Voltage

Total Device Dissipation @ T

Storage Temperature Range

Operating Junction Temperature

Thermal Resistance, Junction to Case

Human Body Model

Machine Model

Designed for GSM and GSM EDGE base station applications with frequencies

Derate above 25°C

NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

Power Gain — 13.5 dB (Typ) @ 90 Watts CW

Efficiency — 52% (Typ) @ 90 Watts CW

= 25°C

Test Conditions

Freescale Semiconductor, Inc.

Characteristic

For More Information On This Product,

Rating

Go to: www.freescale.com

Symbol

DSS

θJC

stg

MRF18090AR3

1.80 - 1.88 GHz, 90 W, 26 V

LATERAL N - CHANNEL

CASE 465B - 03, STYLE 1

RF POWER MOSFET

M3 (Minimum)

2 (Minimum)

- 65 to +150

- 0.5, +15

Class

Value

1.43

250

200

0.7

NI - 880

Order this document

MRF18090AR3

by MRF18090A/D

Watts

W/°C

°C/W

Unit

Vdc

°C

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