RN1971 TOSHIBA Semiconductor CORPORATION, RN1971 Datasheet

RN1971

Manufacturer Part Number

RN1971

Description

Manufacturer

TOSHIBA Semiconductor CORPORATION

Datasheets

1.RN1971.pdf (6 pages)

2.RN1971.pdf (6 pages)

Specifications of RN1971

Date_code

05+

Packing_info

SOT-363

Current page: 1 of 6
Download datasheet (260Kb)

Switching, Inverter Circuit, Interface Circuit

And Driver Circuit Applications

Equivalent Circuit

Absolute Maximum Ratings

Equivalent Circuit

Including two devices in US6 (ultra super mini type 6 leads)

With built-in bias resistors

Simplify circuit design

Reduce a quantity of parts and manufacturing process

Complementary to RN2970~RN2971

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

*: Total rating

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature range

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if

the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Characterisstic

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

(Top View)

RN1970,RN1971

(Ta = 25°C) (Q1, Q2 Common)

Symbol

CBO

CEO

EBO

stg

http://store.iiic.cc/

−55~150

Rating

100

200

150

Unit

°C

JEDEC

JEITA

TOSHIBA

Weight: 6.8mg (typ.)

RN1970,RN1971

2-2J1B

―

2007-11-01

Unit: mm

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