SI1907DL-T1 Vishay Semiconductors, SI1907DL-T1 Datasheet

SI1907DL-T1

Manufacturer Part Number

SI1907DL-T1

Description

Manufacturer

Vishay Semiconductors

Datasheet

1.SI1907DL-T1.pdf (5 pages)

Specifications of SI1907DL-T1

Date_code

04+

Packing_info

SOT363

Current page: 1 of 5
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Notes

Document Number: 71083

S-21374—Rev. B, 12-Aug-02

PRODUCT SUMMARY

ABSOLUTE MAXIMUM RATINGS (T

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (T

Pulsed Drain Current

Continuous Diode Current (Diode Conduction)

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

THERMAL RESISTANCE RATINGS

Maximum Junction-to-Ambient

Maximum Junction-to-Foot (Drain)

Surface Mounted on 1” x 1” FR4 Board.

-12

(V)

0.925 @ V

1.310 @ V

0.650 @ V

= 150_C)

Parameter

DS(on)

Dual P-Channel 1.8-V (G-S) MOSFET

= -2.5 V

= -1.8 V

= -4.5 V

(W)

SC-70 (6-LEADS)

SOT-363

Top View

= 25_C UNLESS OTHERWISE NOTED)

Steady State

t v 5 sec

"0.56

"0.47

"0.39

= 25_C

= 85_C

= 25_C

= 85_C

(A)

Symbol

, T

thJA

thJF

stg

Marking Code

QC XX

Part # Code

Typical

5 secs

"0.56

"0.40

-0.25

0.30

0.16

360

400

300

Lot Traceability

and Date Code

-55 to 150

"1.0

-12

Steady State

Maximum

Vishay Siliconix

"0.53

"0.38

-0.23

0.27

0.14

415

460

350

Si1907DL

www.vishay.com

Unit

_C/W

C/W

2-1

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