SI2315BDS-T1 Vishay Semiconductors, SI2315BDS-T1 Datasheet

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SI2315BDS-T1

Manufacturer Part Number
SI2315BDS-T1
Description
Manufacturer
Vishay Semiconductors
Datasheet

Specifications of SI2315BDS-T1

Date_code
05+
Packing_info
SOT-23

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Notes:
a. Surface Mounted on FR4 board.
b. t ≤ 5 s.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm.
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 72014
S-80642-Rev. E, 24-Mar-08
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
V
DS
- 12
(V)
a
0.050 at V
0.065 at V
0.100 at V
a
R
DS(on)
J
= 150 °C)
GS
GS
a
GS
= - 4.5 V
= - 2.5 V
(Ω)
= - 1.8V
Ordering Information: Si2315BDS-T1
P-Channel 1.8-V (G-S) MOSFET
a
a
G
S
A
1
2
I
- 3.85
= 25 °C, unless otherwise noted
- 3.4
- 2.7
Si2315BDS *(M5)
D
* Marking Code
Steady State
Steady State
Si2315BDS-T1-E3 (Lead (Pb)-free)
Si2315BDS-T1-GE3 (Lead (Pb)-free and Halogen-free)
(A)
T
T
T
T
(SOT-23)
Top View
A
A
A
A
TO-236
t ≤ 5 s
= 25 °C
= 70 °C
= 25 °C
= 70 °C
3
FEATURES
• Halogen-free Option Available
D
Symbol
Symbol
T
R
R
TrenchFET
J
V
V
I
P
, T
DM
I
I
thJA
thJF
GS
DS
D
S
D
stg
®
Power MOSFETs: 1.8 V Rated
- 3.85
- 3.0
- 1.0
1.19
0.76
Typ.
130
5 s
85
60
- 55 to 150
- 12
- 12
± 8
Steady State
- 2.45
- 0.62
Max.
- 3.0
0.75
0.48
105
166
75
Vishay Siliconix
Si2315BDS
www.vishay.com
°C/W
Unit
Unit
°C
W
RoHS*
COMPLIANT
V
A
Available
Pb-free
1

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