SI3915DV-T1 Vishay Semiconductors, SI3915DV-T1 Datasheet

SI3915DV-T1

Manufacturer Part Number

SI3915DV-T1

Description

Manufacturer

Vishay Semiconductors

Datasheet

1.SI3915DV-T1.pdf (5 pages)

Specifications of SI3915DV-T1

Date_code

02+

Packing_info

SOT163

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

SI3915DV-T1-E3

Manufacturer:

VISHAY/威世

Quantity:

20 000

Company:

Meier Automation Equipment Co., Limited

Part Number:

SI3915DV-T1-GE3

Manufacturer:

VISHAY/威世

Quantity:

20 000

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Notes

Document Number: 71299

S-01890—Rev. A, 28-Aug-00

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (T

Pulsed Drain Current

Continuous Source Current (Diode Conduction)

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

Maximum Junction-to-Ambient

Maximum Junction-to-Foot (Drain)

Surface Mounted on 1” x 1” FR4 Board.

–12

(V)

3 mm

0.175 @ V

0.240 @ V

0.120 @ V

= 150 C)

Parameter

DS(on)

Top View

Dual P-Channel 12-V (D-S) MOSFET

TSOP-6

2.85 mm

= –2.5 V

= –1.8 V

( )

= –4.5 V

Steady State

New Product

–2.5

–2.0

–1.7

= 25 C

= 70 C

= 25 C

= 70 C

(A)

5 sec

P-Channel MOSFET

Symbol

, T

thJA

thJF

stg

Typical

5 secs

–1.05

–2.5

–2.0

1.15

0.73

130

P-Channel MOSFET

–55 to 150

–12

–7

Steady State

Maximum

Vishay Siliconix

–0.75

–2.0

–1.7

0.83

0.53

110

150

Si3915DV

www.vishay.com

Unit

C/W

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