SI5519DU-T1-E3 Vishay Semiconductors, SI5519DU-T1-E3 Datasheet
SI5519DU-T1-E3
Manufacturer Part Number
SI5519DU-T1-E3
Description
Manufacturer
Vishay Semiconductors
Datasheet
1.SI5519DU-T1-E3.pdf
(12 pages)
Specifications of SI5519DU-T1-E3
Date_code
07+
Packing_info
QFN
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 Board.
c. t = 5 sec
d. See Reliability Manual for profile. The PowerPAK ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated)
as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure
adequade bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 105 °C/W.
Document Number: 74406
S-70188-Rev. A, 29-Jan-07
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
PRODUCT SUMMARY
N-Channel
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Source Drain Current Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
P-Channel
Ordering Information: Si5519DU-T1-E3 (Lead (Pb)-free)
PowerPAK ChipFET Dual
V
DS
- 20
20
(V)
0.064 at V
0.095 at V
0.036 at V
0.063 at V
Bottom View
r
J
DS(on)
N- and P-Channel 20-V (D-S) MOSFET
b, f
= 150 °C)
GS
GS
GS
GS
(Ω)
= - 4.5 V
= - 2.5 V
= 4.5 V
= 2.5 V
I
D
- 6.0
- 6.0
6.0
6.0
(A)
d, e
a
A
New Product
= 25 °C, unless otherwise noted
Q
Steady State
Marking Code
T
T
T
T
T
5.4 nC
6.0 nC
T
T
T
T
T
g
t ≤ 5 sec
C
C
C
C
C
EB
A
A
A
A
A
(Typ)
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
XXX
Part #
Code
Lot Traceability
and Date Code
FEATURES
APPLICATIONS
• TrenchFET
• Portable DC-DC Applications
Symbol
Symbol
T
R
R
J
V
V
I
P
, T
I
DM
thJA
thJC
I
DS
GS
D
S
D
stg
G
1
Typ
®
9.5
43
N-Channel
N-Channel
N-Channel MOSFET
Power MOSFETs
6.0
2.27
1.45
4.9
1.9
10.4
6.0
6.0
6.0
6.6
20
25
a, b, c
b, c
b, c
b, c
b, c
a
a
a
D
Max
S
55
12
1
1
- 55 to 150
± 12
260
Typ
9.5
43
P-Channel
P-Channel
- 4.8
- 3.8
- 1.9
2.27
1.45
- 6.0
- 6.0
- 6.0
10.4
- 20
- 20
Vishay Siliconix
6.6
G
b, c
b, c
b, c
b, c
b, c
a
a
a
2
Max
55
12
P-Channel MOSFET
Si5519DU
www.vishay.com
S
D
2
2
°C/W
Unit
Unit
°C
W
RoHS
V
A
COMPLIANT
1
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