LM5111-1MX+ National Semiconductor, LM5111-1MX+ Datasheet

LM5111-1MX+

Manufacturer Part Number

LM5111-1MX+

Description

Manufacturer

National Semiconductor

Datasheets

1.LM5111-4MYX.pdf (12 pages)

2.LM5111-1MX.pdf (14 pages)

Specifications of LM5111-1MX+

Notes

NEW

Date_code

10+

Current page: 1 of 12
Download datasheet (289Kb)

LM5111

Dual 5A Compound Gate Driver

General Description

The LM5111 Dual Gate Driver replaces industry standard

gate drivers with improved peak output current and efficiency.

Each “compound” output driver stage includes MOS and bipo-

lar transistors operating in parallel that together sink more

than 5A peak from capacitive loads. Combining the unique

characteristics of MOS and bipolar devices reduces drive cur-

rent variation with voltage and temperature. Under-voltage

lockout protection is also provided. The drivers can be oper-

ated in parallel with inputs and outputs connected to double

the drive current capability. This device is available in the

SOIC-8 package or the thermally enhanced MSOP8-EP

package.

Features

■

Connection Diagram

Independently drives two N-Channel MOSFETs

Compound CMOS and bipolar outputs reduce output

current variation

5A sink/3A source current capability

Two channels can be connected in parallel to double the

drive current

201123

SOIC-8, eMSOP-8

■

Typical Applications

■

Packages

■

Independent inputs (TTL compatible)

Fast propagation times (25 ns typical)

Fast rise and fall times (14 ns/12 ns rise/fall with 2 nF load)

Available in dual non-inverting, dual inverting and

combination configurations

Supply rail under-voltage lockout protection (UVLO)

LM5111-4 UVLO configured to drive PFET through

OUT_A and NFET through OUT_B

Pin compatible with industry standard gate drivers

Synchronous Rectifier Gate Drivers

Switch-mode Power Supply Gate Driver

Solenoid and Motor Drivers

SOIC-8

Thermally Enhanced MSOP8-EP

20112301

November 5, 2007

www.national.com

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