AM29LV800D AMD [Advanced Micro Devices], AM29LV800D Datasheet - Page 45

• Manufacturer Part Number: AM29LV800D
• Description: 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
• Manufacturer: AMD [Advanced Micro Devices]

Erase and Programming Performance
Notes:
1. Typical program and erase times assume the following conditions: 25
2. Under worst case conditions of 90°C, V
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program
6. The device has a guaranteed minimum erase and program cycle endurance of 1,000,000 cycles.
Latchup Characteristics
Includes all pins except V
3.0 V, one pin at a time.
TSOP and SO Pin Capacitance
Notes:
1. Sampled, not 100% tested.
2. Test conditions T
Data Retention
43
Parameter
Sector Erase Time
Chip Erase Time
Byte Programming Time
Word Programming Time
Chip Programming
Time
(Note 3)
Input voltage with respect to V
(including A9, OE#, and RESET#)
Input voltage with respect to V
V
Minimum Pattern Data Retention Time
CC
Additionally, programming typicals assume checkerboard pattern.
bytes program faster than the maximum program times listed.
command. See Table 5 for further information on command definitions.
Parameter
Symbol
Current
C
C
C
OUT
IN2
IN
A
= 25°C, f = 1.0 MHz.
Parameter
Parameter Description
Description
Control Pin Capacitance
Word Mode
CC
Byte Mode
Output Capacitance
. Test conditions: V
Input Capacitance
SS
SS
on all pins except I/O pins
on all I/O pins
Typ (Note
CC
P R E L I M I N A R Y
8.4
5.8
1)
14
16
= 2.7 V, 1,000,000 cycles.
1
8
CC
Am29LV800D
=
Max (Note 2)
300
360
10
25
17
Conditions
150°C
125°C
Test
Test Setup
V
V
V
OUT
IN
IN
–100 mA
–1.0 V
–1.0 V
= 0
= 0
Min
= 0
°
Am29LV800D_00_A4_E January 21, 2005
Unit
C, 3.0 V V
µs
µs
s
s
s
s
Min
Excludes 00h programming
prior to erasure
Excludes system level
overhead (Note 5)
10
20
CC
, 1,000,000 cycles.
Typ
8.5
7.5
6
Comments
V
+100 mA
CC
12.5 V
Max
Max
+ 1.0 V
7.5
12
9
Years
Years
Unit
Unit
pF
pF
pF