K9F2808Q0B Samsung semiconductor, K9F2808Q0B Datasheet - Page 26

• Manufacturer Part Number: K9F2808Q0B
• Description: 16M x 8 Bit NAND Flash Memory
• Manufacturer: Samsung semiconductor

K9F2808Q0B-DCB0,DIB0
K9F2808U0B-VCB0,VIB0
Table3. Read Status Register Definition
BLOCK ERASE
The Erase operation is done on a block(16K Bytes) basis. Block Erase is executed by entering Erase Setup command(60h) and 2
cycle block addresses and Erase Confirm command(D0h). Only address A14 to A23 is valid while A9 to A13 is ignored. This two-
step sequence of setup followed by execution command ensures that memory contents are not accidentally erased due to external
noise condition. At the rising edge of WE after erase confirm command input, internal write controller handles erase and erase-veri-
fication. When the erase operation is completed, the Write Status Bit(I/O 0) may be checked.
Figure 10 details the sequence.
READ STATUS
The device contains a Status Register which may be read to find out whether program or erase operation is completed, and whether
the program or erase operation is completed successfully. After writing 70h command to command register, a read cycle takes out
the content of the Status Register to the I/O pins on the falling edge of CE or RE. This two line control allows the system to poll the
progress of each device in multiple memory connections even when R/B pins are common-wired. RE or CE does not need to be tog-
gled for updated status. Refer to table 3 for specific Status Register definitions. The command register remains in Status Read mode
until further commands are issued to it. Therefore, if the status register is read during a random read cycle, a read command(00 h or
50h) should be given before sequential page read cycle.
Figure 10. Block Erase Operation
R/B
I/O
0
~
7
I/O #
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
60h
Block Add. : A
Address Input(2Cycle)
K9F2808U0B-YCB0,YIB0
K9F2808U0B-DCB0,DIB0
9
~ A
Reserved for Future
Device Operation
Program / Erase
2 3
Write Protect
Status
Use
D0h
26
t
BERS
"0" : Successful Program / Erase
"1" : Error in Program / Erase
"0"
"0"
"0"
"0"
"0"
"0" : Busy
"0" : Protected
70h
FLASH MEMORY
Definition
"1" : Not Protected
"1" : Ready
I/O
Fail
0
Pass