AGR09130E TRIQUINT [TriQuint Semiconductor], AGR09130E Datasheet

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AGR09130E

Manufacturer Part Number
AGR09130E
Description
130 W, 921 MHz-960 MHz, N-Channel E-Mode, Lateral MOSFET
Manufacturer
TRIQUINT [TriQuint Semiconductor]
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AGR09130EF
Manufacturer:
ASI
Quantity:
20 000
AGR09130E
130 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET
access (CDMA), global system for mobile communi-
cation (GSM), enhanced data for global evolution
(EDGE), and time division multiple access (TDMA)
single and multicarrier class AB wireless base station
amplifier applications. This device is manufactured
on an advanced LDMOS technology offering state-
of-the-art performance, and reliability. Packaged in
an industry-standard package incorporating internal
matching and capable of delivering a minimum out-
put power of 130 W, it is ideally suited for today's RF
power amplifier applications.
Introduction
The
metal oxide semiconductor (LDMOS) RF power tran-
sistor suitable for cellular band, code division multiple
Features
Typical performance ratings are for the EDGE
format: 3GPP GSM 05.05:
— Output power (P
— Power gain: 17.8 dB.
— Modulation spectrum:
— Error vector magnitude (EVM) = 1.8%.
— Return loss: –10 dB.
High-reliability, gold-metalization process.
Internally matched.
High gain, efficiency, and linearity.
Integrated ESD protection.
Si LDMOS.
Industry-standard packages.
P
1dB
AGR09130E
@ ±400 kHz = –60 dBc.
@ ±600 kHz = –72 dBc.
of 130 W minimum output power.
AGR09130EU
7
Figure 1. Available Packages
is a high-voltage, laterally diffused
OUT
): 50 W.
48
AGR09130EF
5
Table 1. Thermal Characteristics
Table 2. Absolute Maximum Ratings*
* Stresses in excess of the absolute maximum ratings can cause
Table 3. ESD Rating*
* Although electrostatic discharge (ESD) protection circuitry has
Caution: MOS devices are susceptible to damage from elec-
Drain-source Voltage
Gate-source Voltage
Drain Current—Continuous
Total Dissipation at T
Operating Junction Tempera-
Storage Temperature Range
Thermal Resistance,
been designed into this device, proper precautions must be
taken to avoid exposure to ESD and electrical overstress (EOS)
during all handling, assembly, and test operations. Agere
employs a human-body model (HBM), a machine model (MM),
and a charged-device model (CDM) qualification requirement in
order to determine ESD-susceptibility limits and protection
design evaluation. ESD voltage thresholds are dependent on the
circuit parameters used in each of the models, as defined by
JEDEC's JESD22-A114B (HBM), JESD22-A115A (MM), and
JESD22-C101A (CDM) standards.
permanent damage to the device. These are absolute stress rat-
ings only. Functional operation of the device is not implied at
these or any other conditions in excess of those given in the
operational sections of the data sheet. Exposure to absolute
maximum ratings for extended periods can adversely affect
device reliability.
Derate Above 25 C:
ture
Junction to Case:
AGR09130E
AGR09130EU
AGR09130EF
AGR09130EU
AGR09130EF
AGR09130EU
AGR09130EF
HBM
CDM
Parameter
MM
trostatic charge. Reasonable precautions in han-
dling and packaging MOS devices should be
observed.
Parameter
C
Minimum (V)
= 25 °C:
1500
500
50
Sym
R
JC
V
T
Sym
V
P
DSS
T
STG
I
GS
D
D
J
Value
0.5
0.5
–65, 150
–0.5, 15 Vdc
Value
350
350
200
2.0
2.0
65
15
PEAK Devices
Class
1B
A
4
°C/W
Unit
W/°C
Unit
Vdc
Adc
°C
°C
W

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AGR09130E Summary of contents

Page 1

... Drain-source Voltage V Gate-source Voltage V Drain Current—Continuous Total Dissipation °C: C AGR09130EU P AGR09130EF Derate Above 25 C: AGR09130EU AGR09130EF Operating Junction Tempera- ture Storage Temperature Range T * Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress rat- ings only ...

Page 2

W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Electrical Characteristics Recommended operating conditions apply unless otherwise specified: T Table 4. dc Characteristics Parameter Drain-source Breakdown Voltage (V Gate-source Leakage Current (V Zero Gate Voltage Drain Leakage Current (V Forward ...

Page 3

... C9 C8 Z17 C13 C14 R1 Z10 Schematic MHz RM73B2B510J RM73B2B563J Component Layout Figure 2. AGR09130E Test Circuit C17 C19 C26 C20 C28 C21 Z16 C16 Z11 Z12 Z13 Z14 Z15 C15 DUT 3 RM73B2B120J C22 ...

Page 4

W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Typical Performance Characteristics Ω 0 MHz (f) (Complex Source Impedance) 920 (f1) 940 960 (f3) INPUT MATCH Figure 3. Series Equivalent Input and Output Impedances ...

Page 5

Typical Performance Characteristics 200 180 160 140 120 100 0.00 0. 18.5 18 17.5 17 16.5 16 15.5 15 14.5 14 920 925 Figure 5. Power Gain and Return Loss vs. Frequency ...

Page 6

W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Typical Performance Characteristics 960 MHz Figure 6. Power Gain and Drain Efficiency vs. Power Out 0 Eff -10 ...

Page 7

Typical Performance Characteristics 0 -10 -20 -30 -40 -50 -60 -70 -80 -90 35 FREQUENCY = 940 MHz, V Figure 8. EDGE Modulation Spectrum vs. Power Out 940 MHz 35.00 37. ...

Page 8

W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Typical Performance Characteristics 0.00 -10.00 -20.00 -30.00 -40.00 -50.00 -60.00 -70.00 0. 940.0 MHz 940.1 MHz, V (continued) IM3+/- IM5+/- IM7+/- 50.00 100.00 POWER OUT (P ) ...

Page 9

... AGR09130EU YYWWUR XXXX XXXXZZ AGR09130EF 1 AGERE PEAK DEVICES M-AGR21125F AGR09130EF YYWWUR XXXX ZZZZZZZ 2 Marking Notes: Line 1: Brand & Manufacturer Line 2: Part Number Line 3: 4 digit Trace Code first two digits are letters followed by two digit number 130 W, 921 MHz—960 MHz, N-Chann el E-Mode, Latera l MOSFET ...

Page 10

... Kemet is a registered trademark of KRC Trade Corporation. Sprague is a registered trademark of Sprague Electric Company Corporation. Kreger is a registered trademark of Kreger Components, Inc. Taconic is a registered trademark of Tonoga Limited DBA Taconic Plastics Ltd. December 2005 Rev B Package AGR09130EF (flanged) Availability Tray Tray ...

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