AGR09085E TRIQUINT [TriQuint Semiconductor], AGR09085E Datasheet

AGR09085E

Manufacturer Part Number

AGR09085E

Description

85 W, 865 MHz-895 MHz, N-Channel E-Mode, Lateral MOSFET

Manufacturer

TRIQUINT [TriQuint Semiconductor]

Datasheet

1.AGR09085E.pdf (8 pages)

Available stocks

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Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

AGR09085EF

Manufacturer:

AGERE

Quantity:

Company:

Meier Automation Equipment Co., Limited

Part Number:

AGR09085EF

Manufacturer:

ASI

Quantity:

20 000

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AGR09085E

85 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET

Introduction

The AGR09085E is a high-voltage, laterally diffused

metal oxide semiconductor (LDMOS) RF power tran-

sistor suitable for cellular band, code division multiple

access (CDMA), global system for mobile communi-

cation (GSM), enhanced data for global evolution

(EDGE), and time division multiple access (TDMA)

single and multicarrier class AB wireless base station

amplifier applications. This device is manufactured

on an advanced LDMOS technology offering state-

of-the-art performance, reliability, and best-in-class

thermal resistance. Packaged in an industry-stan-

dard package incorporating internal matching and

capable of delivering a minimum output power of

85 W, it is ideally suited for today's RF power ampli-

fier applications.

Features

AGR09085EU (unflanged)

pilot, sync, paging, and traffic codes 8—13:

— Output power (P

— Efficiency: 28%.

— Adjacent channel power ratio (ACPR) for

— Return loss: 10 dB.

Typical performance ratings are for IS-95 CDMA,

— Power gain: 18 dB.

High-reliability, gold-metalization process.

Best-in-class thermal resistance.

Internally matched.

High gain, efficiency, and linearity.

Integrated ESD protection.

Si LDMOS.

Industry-standard packages.

85 W minimum output power.

30 kHz bandwidth (BW):

(750 kHz offset: –45 dBc).

1.98 MHz offset: –60 dBc).

YLE 1

Figure 1. Available Packages

OUT

): 20 W.

AGR09085EF (flanged)

06, STYLE 1

Table 1. Thermal Characteristics

Table 2. Absolute Maximum Ratings*

* Stresses in excess of the absolute maximum ratings can cause

Table 3. ESD Rating*

* Although electrostatic discharge (ESD) protection circuitry has

Caution: MOS devices are susceptible to damage from elec-

Drain-source Voltage

Gate-source Voltage

Drain Current—Continuous

Total Dissipation at T

Operating Junction Tempera-

Storage Temperature Range

Thermal Resistance,

been designed into this device, proper precautions must be

taken to avoid exposure to ESD and electrical overstress (EOS)

during all handling, assembly, and test operations. Agere

employs a human-body model (HBM), a machine model (MM),

and a charged-device model (CDM) qualification requirement in

order to determine ESD-susceptibility limits and protection

design evaluation. ESD voltage thresholds are dependent on the

circuit parameters used in each of the models, as defined by

JEDEC's JESD22-A114B (HBM), JESD22-A115A (MM), and

JESD22-C101A (CDM) standards.

permanent damage to the device. These are absolute stress rat-

ings only. Functional operation of the device is not implied at

these or any other conditions in excess of those given in the

operational sections of the data sheet. Exposure to absolute

maximum ratings for extended periods can adversely affect

device reliability.

Derate Above 25 C:

ture

Junction to Case:

AGR09085E

AGR09085EU

AGR09085EF

AGR09085EU

AGR09085EF

AGR09085EU

AGR09085EF

HBM

CDM

Parameter

trostatic charge. Reasonable precautions in han-

dling and packaging MOS devices should be

observed.

Parameter

Minimum (V)

= 25 °C:

1500

500

Sym

STG

DSS

Value

0.7

–65, 150

–0.5, 15 Vdc

Value

1.43

250

200

8.5

PEAK Devices

Class

°C/W

Unit

W/°C

Unit

Vdc

Adc

°C

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AGR09085E Summary of contents

Page 1

... AGR09085E 85 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09085E is a high-voltage, laterally diffused metal oxide semiconductor (LDMOS) RF power tran- sistor suitable for cellular band, code division multiple access (CDMA), global system for mobile communi- cation (GSM), enhanced data for global evolution ...

Page 2

W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Electrical Characteristics Recommended operating conditions apply unless otherwise specified: T Table 4. dc Characteristics Parameter Drain-source Breakdown Voltage (V Gate-source Leakage Current (V Zero Gate Voltage Drain Leakage Current (V Forward ...

Page 3

... W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Z16 Z17 C10 C13 Schematic Component Layout Figure 2. AGR09085E Test Circuit C17 C18 C19 C20 C21 C22 C16 Z11 Z12 Z13 Z14 C15 RF OUTPUT C14 Z10 DUT PINS ...

Page 4

W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Typical Performance Characteristics Ω 0 MHz (f) (Complex Source Impedance) 865 (f1) 880 (f2) 895 (f3) INPUT MATCH Figure 3. Series Equivalent Input and Output Impedances f1 Z ...

Page 5

Typical Performance Characteristics 0 -10 -20 -30 -40 -50 -60 -70 0.00 5.00 TEST CONDITIONS Vdc 0 ° FREQUENCY = 880 MHz; IS-95 CDMA PILOT, PAGING, SYNC, TRAFFIC ...

Page 6

W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Typical Performance Characteristics 0.00 20.00 TEST CONDITIONS Vdc 0 °C, WAVEFORM ...

Page 7

Typical Performance Characteristics 0.00 -10.00 -20.00 -30.00 -40.00 -50.00 -60.00 0.00 20.00 TEST CONDITIONS Vdc 0 ° FREQUENCY 1 = 880.0 MHz; FREQUENCY 2 = 880.1 MHz. 85 ...

Page 8

... W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Package Dimensions All dimensions are in inches. Tolerances are ±0.005 in. unless specified. AGR09085EU 1 PEAK DEVICES AGR09085EU XXXX 2 AGR09085EF PEAK DEVICES AGR09085EF XXXX - 4 Digit Trace Code XXXX 2 PINS: 1. DRAIN 2. GATE 3 ...

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