2SK881_07 TOSHIBA [Toshiba Semiconductor], 2SK881_07 Datasheet
2SK881_07
Manufacturer Part Number
2SK881_07
Description
Silicon N Channel Junction Type FM Tuner Applications
Manufacturer
TOSHIBA [Toshiba Semiconductor]
Datasheet
1.2SK881_07.pdf
(6 pages)
FM Tuner Applications
VHF Band Amplifier Applications
•
•
Absolute Maximum Ratings
Electrical Characteristics
Low noise figure: NF = 2.5dB (typ.) (f = 100 MHz)
High forward transfer admittance: |Y
Gate-drain voltage
Gate current
Drain power dissipation
Junction temperature
Storage temperature range
Note: Using continuously under heavy loads (e.g. the application of high
Gate leakage current
Gate-drain breakdown voltage
Drain current
Gate-source cut-off voltage
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Power gain
Noise figure
Note: I
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
DSS
Characteristics
Characteristics
classification O: 1.0~3.0, Y: 2.5~6.0, GR: 5.0~10.0
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
(Ta = 25°C)
(Ta = 25°C)
V
V
Symbol
Symbol
GS (OFF)
(BR) GDO
V
⎪Y
fs
I
I
C
T
C
G
GSS
DSS
GDO
P
NF
I
T
| = 9 mS (typ.)
stg
rss
G
iss
ps
fs
D
j
(Note)
⎪
2SK881
V
I
V
V
V
V
V
V
V
G
GS
GS
DS
GS
DS
DS
DD
DD
= −10 μA
−55~125
Rating
= 10 V, I
= 10 V, V
= 10 V, V
= −0.5 V, V
= 0, V
= 0, V
= 10 V, f = 100 MHz (Figure 1)
= 10 V, f = 100 MHz (Figure 1)
−18
100
125
10
1
DS
DS
Test Condition
D
= 10 V
= 10 V, f = 1 kHz
GS
GS
= 1 μA
DS
= 0, f = 1 MHz
= 0, f = 1 MHz
= 0
Unit
mW
mA
°C
°C
V
Weight: 0.006 g (typ.)
JEDEC
JEITA
TOSHIBA
−0.4
Min
−18
1.0
10
⎯
⎯
⎯
⎯
⎯
Typ.
6.0
2.5
18
⎯
⎯
⎯
⎯
⎯
9
2-2E1C
SC-70
2007-11-01
―
−4.0
0.15
Max
−10
3.5
10
⎯
⎯
⎯
⎯
2SK881
Unit: mm
Unit
mA
mS
nA
pF
pF
dB
dB
V
V
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2SK881_07 Summary of contents
Page 1
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type FM Tuner Applications VHF Band Amplifier Applications • Low noise figure 2.5dB (typ 100 MHz) • High forward transfer admittance: |Y Absolute Maximum Ratings Characteristics Gate-drain voltage ...
Page 2
L : 0.8 mmφ A plated Cu wire, 3 turns ID length 0.8 mmφ A plated Cu wire, 3.5 turns ID length Figure 1 100 MHz ...
Page 3
3 2SK881 2007-11-01 ...
Page 4
4 2SK881 2007-11-01 ...
Page 5
5 2SK881 2007-11-01 ...
Page 6
RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to ...