SIGC06T60G_05 INFINEON [Infineon Technologies AG], SIGC06T60G_05 Datasheet
SIGC06T60G_05
Related parts for SIGC06T60G_05
SIGC06T60G_05 Summary of contents
Page 1
IGBT Chip FEATURES: 600V Trench & Field Stop technology low V CE(sat) low turn-off losses short tail current positive temperature coefficient easy paralleling Chip Type V CE SIGC06T60G 600V MECHANICAL PARAMETER: Raster size Emitter pad size Gate pad size ...
Page 2
MAXIMUM RATINGS: Parameter Collector-emitter voltage collector current, limited by T Pulsed collector current, t limited Gate emitter voltage Operating junction and storage temperature SC data 15V 360V ...
Page 3
CHIP DRAWING: Edited by INFINEON Technologies CLS, L7521A, Edition 2, 27.01.2005 SIGC06T60G ...
Page 4
FURTHER ELECTRICAL CHARACTERISTICS: This chip data sheet refers to the device data sheet DESCRIPTION: AQL 0,65 for visual inspection according to failure catalog Electrostatic Discharge Sensitive Device according to MIL-STD 883 Test-Normen Villach/Prüffeld Published by Infineon Technologies AG, Bereich Kommunikation ...