SIGC100T60R3_10 INFINEON [Infineon Technologies AG], SIGC100T60R3_10 Datasheet
SIGC100T60R3_10
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SIGC100T60R3_10 Summary of contents
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IGBT Chip Features: 600V Trench & Field Stop technology low V CE(sat) low turn-off losses short tail current positive temperature coefficient easy paralleling Chip Type V CE SIGC100T60R3 600V Mechanical Parameter Raster size Emitter pad size (incl. gate pad) ...
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Maximum Ratings Parameter Collector-Emitter voltage collector current, limited by T Pulsed collector current, t limited Gate emitter voltage Junction temperature range Operating junction temperature 2 ) Short circuit data V = 15V, ...
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Further Electrical Characteristic Switching characteristics and thermal properties are depending strongly on module design and mounting technology and can therefore not be specified for a bare die. Edited by INFINEON Technologies, IMM PSD, L7601AA, Edition 2.1, 04.05.2010 SIGC100T60R3 ...
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Chip Drawing Emitter pad G = Gate pad T = Test pad do not contact Edited by INFINEON Technologies, IMM PSD, L7601AA, Edition 2.1, 04.05.2010 SIGC100T60R3 ...
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Description AQL 0,65 for visual inspection according to failure catalogue Electrostatic Discharge Sensitive Device according to MIL-STD 883 Revision History Version 2.1 Published by Infineon Technologies AG 81726 Munich, Germany © 2010 Infineon Technologies AG All Rights Reserved. Legal Disclaimer ...