SIGC144T170R2C_09 INFINEON [Infineon Technologies AG], SIGC144T170R2C_09 Datasheet

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IGBT Chip in NPT-technology Features: 1700V NPT technology 280 µm chip short circuit prove positive temperature coefficient easy paralleling Chip Type V CE SIGC144T170R2C 1700V Mechanical Parameter Raster size Emitter pad size Gate pad size Area total Thickness Wafer size ...

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Maximum Ratings Parameter Collector-Emitter voltage collector current, limited by T Pulsed collector current, t limited Gate emitter voltage Junction temperature range Operating junction temperature 2 ) Short circuit data V = 15V, ...

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Further Electrical Characteristic Switching characteristics and thermal properties are depending strongly on module design and mounting technology and can therefore not be specified for a bare die. Edited by INFINEON Technologies, AIM IMM, L7361M, Edition 2.1, 11.11.2009 SIGC144T170R2C ...

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Chip Drawing E = Emitter G = Gate T = Test pad do not contact Edited by INFINEON Technologies, AIM IMM, L7361M, Edition 2.1, 11.11.2009 SIGC144T170R2C ...

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Description AQL 0,65 for visual inspection according to failure catalogue Electrostatic Discharge Sensitive Device according to MIL-STD 883 Published by Infineon Technologies AG 81726 Munich, Germany © 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in ...