IGBT Chip FEATURES: 1700V Trench + Field Stop technology low turn-off losses short tail current positive temperature coefficient easy paralleling Chip Type V CE SIGC42T170R3G 1700V MECHANICAL PARAMETER: Raster size Emitter pad size Gate pad size Area total / ...
MAXIMUM RATINGS: Parameter Collector-emitter voltage = collector current, limited by T Pulsed collector current, t limited Gate emitter voltage Operating junction and storage temperature 1 ) depending on thermal properties of assembly STATIC ...
FURTHER ELECTRICAL CHARACTERISTICS: This chip data sheet refers to the device data sheet DESCRIPTION: AQL 0,65 for visual inspection according to failure catalog Electrostatic Discharge Sensitive Device according to MIL-STD 883 Test-Normen Villach/Prüffeld Published by Infineon Technologies AG, Bereich Kommunikation ...