TK12A60W TOSHIBA [Toshiba Semiconductor], TK12A60W Datasheet - Page 3

• Manufacturer Part Number: TK12A60W
• Description: Switching Voltage Regulators
• Manufacturer: TOSHIBA [Toshiba Semiconductor]

6. 6. 6. 6. Electrical Characteristics
6.1.
6.1.
6.2.
6.2.
6.3.
6.3.
6.4.
6.4.
6.1.
6.1. Static Characteristics (T
6.2.
6.2. Dynamic Characteristics (T
6.3.
6.3. Gate Charge Characteristics (T
6.4.
6.4. Source-Drain Characteristics (T
Electrical Characteristics
Electrical Characteristics
Electrical Characteristics
Gate leakage current
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source on-resistance
Input capacitance
Reverse transfer capacitance
Output capacitance
Effective output capacitance
Gate resistance
Switching time (rise time)
Switching time (turn-on time)
Switching time (fall time)
Switching time (turn-off time)
MOSFET dv/dt ruggedness
Total gate charge (gate-source plus
gate-drain)
Gate-source charge 1
Gate-drain charge
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
Diode dv/dt ruggedness
Static Characteristics (T
Static Characteristics (T
Dynamic Characteristics (T
Dynamic Characteristics (T
Gate Charge Characteristics (T
Gate Charge Characteristics (T
Source-Drain Characteristics (T
Source-Drain Characteristics (T
Static Characteristics (T
Dynamic Characteristics (T
Gate Charge Characteristics (T
Source-Drain Characteristics (T
Characteristics
Characteristics
Characteristics
Characteristics
a a a a
Fig.
Fig.
Fig.
Fig. 6.2.1
= 25
= 25
= 25    unless otherwise specified)
= 25
V
R
Symbol
Symbol
Symbol
Symbol
a a a a
(BR)DSS
C
dv/dt
V
dv/dt
Q
I
I
DS(ON)
C
C
6.2.1
6.2.1
C
6.2.1 Switching Time Test Circuit
Q
GSS
DSS
V
Q
t
t
Q
o(er)
DSF
r
t
I
on
off
= 25
= 25
oss
t
t
gs1
= 25
= 25    unless otherwise specified)
rss
iss
rr
rr
g
gd
th
r
f
rr
g
a a a a
a a a a
= 25
= 25
unless otherwise specified)
unless otherwise specified)
= 25
= 25    unless otherwise specified)
unless otherwise specified)
= 25
= 25
= 25    unless otherwise specified)
= 25
V
V
I
V
V
V
V
V
See Figure 6.2.1
V
Switching Time Test Circuit
V
I
I
-dI
I
Switching Time Test Circuit
Switching Time Test Circuit
D
DR
DR
DR
GS
DS
DS
GS
DS
DS
DS
DD
DD
= 10 mA, V
DR
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
= 11.5 A, V
= 5.8 A, V
= 5.8 A, V
= 600 V, V
= 10 V, I
= 300 V, V
= 0 to 400 V, V
= OPEN, f = 1 MHz
= ±30 V, V
= 10 V, I
= 0 to 400 V, I
/dt = 100 A/µs
3
400 V, V
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
Test Condition
Test Condition
Test Condition
Test Condition
D
D
GS
GS
GS
= 0.6 mA
= 5.8 A
GS
DS
GS
GS
GS
= 0 V
= 0 V
= 0 V, V
= 0 V
= 0 V
= 0 V
= 0 V, f = 1 MHz
= 10 V, I
D
GS
= 5.8 A
= 0 V
DD
D
= 400 V
= 11.5 A
Min
600
Min
Min
Min
2.7
50
15


















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0.265
Typ.
Typ.
Typ.
Typ.
890
250
2.8
6.5
5.5
5.5
2.3
23
41
23
45
85
25
11
20







TK12A60W
2012-08-27
Max
Max
Max
Max
-1.7
3.7
0.3
±1
10


















Rev.2.0
V/ns
V/ns
Unit
Unit
Unit
Unit
µA
nC
µC
pF
ns
ns
Ω
Ω
V
V
A