IXFN230N10_08 IXYS [IXYS Corporation], IXFN230N10_08 Datasheet
IXFN230N10_08
Manufacturer Part Number
IXFN230N10_08
Description
Power MOSFET Single Die MOSFET
Manufacturer
IXYS [IXYS Corporation]
Datasheet
1.IXFN230N10_08.pdf
(5 pages)
Power MOSFET
Single Die MOSFET
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t
Symbol
V
V
V
V
I
I
I
I
E
dV/dt
P
T
T
T
V
M
Weight
Symbol
(T
BV
V
I
I
R
D25
L(RMS)
DM
A
GSS
DSS
© 2008 IXYS Corporation, All rights reserved
J
JM
stg
DSS
DGR
GSS
GSM
AS
d
ISOL
GS(th)
DS(on)
d
J
DSS
= 25°C, unless otherwise specified)
Test Conditions
T
T
Continuous
Transient
T
External lead current limit
T
T
T
I
T
50/60 Hz, RMS
I
Mounting torque
Terminal connection torque
V
V
V
V
V
V
Test Conditions
S
ISOL
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
GS
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C, Chip capability
= 25°C, pulse width limited by T
= 25°C
= 25°C
≤ I
= 25°C
≤ 1mA
= 0V, I
= V
= ±20V, V
= V
= 0V
= 10V, I
DM
, V
GS
DSS
, I
DD
D
D
D
= 3mA
≤ V
= 8mA
= 0.5 • I
DS
DSS
= 0V
t = 1min
t = 1s
, T
D25
J
GS
≤ 150°C
, Note 1
= 1MΩ
T
J
= 125°C
rr
JM
IXFN230N10
Min.
100
Characteristic Values
2.0
-55 ... +150
-55 ... +150
Maximum Ratings
1.3/11.5
1.5/13
Typ.
2500
3000
100
100
±20
±30
230
200
920
100
700
150
10
30
4
±200
Max.
100
4.0
6.0
Nm/lb.in.
Nm/lb.in.
2
V/ns
mΩ
mA
V~
V~
μA
nA
°C
°C
°C
W
V
V
V
V
A
A
A
A
g
V
V
J
V
I
R
t
Features
•
•
•
•
•
•
•
•
Advantages
•
•
•
Applications
•
•
•
•
•
G = Gate
S = Source
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
miniBLOC, SOT-227 B
D25
rr
International standard package
miniBLOC, with Aluminium nitride
isolation
Low R
Rugged polysilicon gate cell structure
Avalanche rated
Guaranteed FBSOA
Low package inductance
Fast intrinsic Rectifier
Easy to mount
Space savings
High power density
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Temperature and lighting controls
DS(on)
DSS
E153432
DS (on)
= 100V
= 230A
≤ ≤ ≤ ≤ ≤ 6.0mΩ Ω Ω Ω Ω
≤ ≤ ≤ ≤ ≤ 250ns
HDMOS
G
D = Drain
S
TM
process
DS98548F(12/08)
D
S
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IXFN230N10_08 Summary of contents
Page 1
Power MOSFET Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t Symbol Test Conditions 25°C to 150°C DSS 25°C to 150°C, R DGR J V Continuous GSS V Transient GSM ...
Page 2
Symbol Test Conditions (T = 25°C, unless otherwise specified 10V 60A, Note iss 0V 25V 1MHz oss rss t ...
Page 3
Fig. 1. Output Characteristics @ 25ºC 240 V = 10V 200 7V 160 120 0.0 0.2 0.4 0 Volts DS Fig. 3. Output Characteristics @ 125ºC 240 V = 10V GS 9V ...
Page 4
Fig. 7. Input Admittance 200 180 160 140 120 100 T = 125º 25ºC - 40º 2.5 3.0 3.5 4 Volts GS Fig. 9. Forward Voltage Drop of Intrinsic Diode 300 270 ...
Page 5
Fig. 13. Forward-Bias Safe Operating Area @ T = 25ºC C 1,000 R Limit DS(on) 100 External-Lead Limit 150º 25ºC C Single Pulse Volts DS © 2008 IXYS Corporation, ...