IXFN230N10_08 IXYS [IXYS Corporation], IXFN230N10_08 Datasheet - Page 4

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IXFN230N10_08

Manufacturer Part Number
IXFN230N10_08
Description
Power MOSFET Single Die MOSFET
Manufacturer
IXYS [IXYS Corporation]
Datasheet
IXYS reserves the right to change limits, test conditions, and dimensions.
200
180
160
140
120
100
300
270
240
210
180
150
120
100
10
80
60
40
20
90
60
30
1
0
0
2.5
0.3
0
f
= 1 MHz
0.4
5
3.0
Fig. 9. Forward Voltage Drop of
0.5
10
Fig. 7. Input Admittance
3.5
Fig. 11. Capacitance
T
T
J
Intrinsic Diode
J
0.6
15
= 125ºC
= 125ºC
V
V
V
- 40ºC
GS
SD
DS
25ºC
4.0
- Volts
- Volts
- Volts
0.7
20
4.5
0.8
25
5.0
T
J
0.9
30
= 25ºC
C iss
C oss
C rss
5.5
1.0
35
6.0
1.1
40
1.000
0.100
0.010
0.001
180
160
140
120
100
80
60
40
20
10
0.0001
0
9
8
7
6
5
4
3
2
1
0
0
0
V
I
I
50
D
G
DS
20
= 100A
= 10mA
Fig. 12. Maximum Transient Thermal
= 50V
100 150
0.001
40
Fig. 8. Transconductance
60
Fig. 10. Gate Charge
Q
200 250
Pulse Width - Seconds
G
I
- NanoCoulombs
0.01
D
Impedance
80
- Amperes
100
300 350 400
IXFN230N10
120
0.1
T
J
= - 40ºC
140
450 500
25ºC
125ºC
160
1
180
550 600
200
10

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