IRF320LSPBF IRF [International Rectifier], IRF320LSPBF Datasheet

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IRF320LSPBF

Manufacturer Part Number
IRF320LSPBF
Description
Manufacturer
IRF [International Rectifier]
Datasheet
www.irf.com
Thermal Resistance
l
l
l
l
l
l
l
Description
Advanced HEXFET
utilize advanced processing techniques to achieve extremely low on-
resistance per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of applications.
The D
accommodating die sizes up to HEX-4. It provides the highest power
capability and the lowest possible on-resistance in any existing surface
mount package. The D
because of its low internal connection resistance and can dissipate up
to 2.0W in a typical surface mount application.
The through-hole version (IRF3205L) is available for low-profile
applications.
Absolute Maximum Ratings
R
R
I
I
I
P
V
I
E
dv/dt
T
T
D
D
DM
AR
J
STG
θJC
θJA
D
GS
AR
@ T
@ T
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Lead-Free
@T
2
C
C
C
Pak is a surface mount power package capable of
= 25°C
= 100°C
= 25°C
®
Junction-to-Case
Junction-to-Ambient (PCB mounted, steady-state)
Peak Diode Recovery dv/dt
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Power MOSFETs from International Rectifier
2
Pak is suitable for high current applications
Parameter
Parameter


ƒ
GS
GS

@ 10V
@ 10V
G
*
Typ.
300 (1.6mm from case )
–––
–––
IRF3205SPbF
IRF3205LPbF
IRF3205SPbF
HEXFET
10 lbf•in (1.1N•m)
-55 to + 175
D
S
D
2
Pak
Max.
390
200
± 20
110
1.3
5.0
62
20
80
®
R
Power MOSFET
DS(on)
Max.
V
I
0.75
D
40
IRF3205LPbF
DSS
= 110A
TO-262
= 8.0mΩ
= 55V
PD - 95106
Units
Units
°C/W
W/°C
V/ns
mJ
°C
W
A
V
A
03/11/04
1

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IRF320LSPBF Summary of contents

Page 1

Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free l Description ® Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve ...

Page 2

IRF3205S/LPbF Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient ∆V /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward ...

Page 3

VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 100 10 4.5V 20µs PULSE WIDTH 0 Drain-to-Source Voltage (V) DS 1000 ° ...

Page 4

IRF3205S/LPbF 6000 0V, C iss = SHORTED C rss = C gd 5000 C oss = 4000 Ciss 3000 2000 Coss 1000 Crss 0 ...

Page 5

LIMITED BY PACKAGE 100 100 125 T , Case Temperature ( 0.50 0.20 0.1 0.10 0.05 SINGLE PULSE 0.02 (THERMAL RESPONSE) 0.01 0.01 0.00001 0.0001 www.irf.com ...

Page 6

IRF3205S/LPbF D.U 20V 0.01 Ω Charge 6 500 15V 400 DRIVER 300 + - 200 100 ...

Page 7

D.U.T + ‚ -  Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery Current D.U.T. V Waveform DS Re-Applied Voltage Inductor Curent www.irf.com + • • ƒ • - „ • • • • P.W. Period ...

Page 8

IRF3205S/LPbF 2 Dimensions are shown in millimeters (inches ...

Page 9

TO-262 Package Outline TO-262 Part Marking Information EXAMPLE: T HIS IS AN IRL3103L LOT CODE 1789 AS SEMBLED ON WW 19, 1997 ASS EMBLY LINE "C" Note: "P" embly line pos ition indicates "Lead-Free" ...

Page 10

IRF3205S/LPbF 2 D Pak Tape & Reel Infomation Dimensions are shown in millimeters (inches) TRR FEED DIRECTION 1.85 (.073) 1.65 (.065) TRL FEED DIRECTION 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED ...

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