IRF320LSPBF IRF [International Rectifier], IRF320LSPBF Datasheet - Page 2

• Manufacturer Part Number: IRF320LSPBF
• Manufacturer: IRF [International Rectifier]

IRF3205S/LPbF
Source-Drain Ratings and Characteristics

ƒ
*
‚
Electrical Characteristics @ T
Notes:
I
I
V
t
Q
t
I
I
V
∆V
R
V
g
Q
Q
Q
t
t
t
t
L
L
C
C
C
E
SM
When mounted on 1" square PCB ( FR-4 or G-10 Material ).
S
rr
on
DSS
GSS
For recommended footprint and soldering techniques refer to application note #AN-994.
d(on)
r
d(off)
f
SD
2
fs
D
S
rr
Repetitive rating; pulse width limited by
(BR)DSS
GS(th)
AS
I
DS(on)
iss
oss
rss
g
gs
gd
max. junction temperature. ( See fig. 11 )
R
T
SD
Starting T
(BR)DSS
J
G
≤ 175°C
≤ 62A di/d ≤ 207A/µs, V
= 25Ω, I
/∆T
J
J
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Drain-to-Source Leakage Current
= 25°C, L = 138µH
AS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Single Pulse Avalanche Energy
Internal Drain Inductance
Internal Source Inductance
= 62A. (See Figure 12)

Parameter
Parameter
DD
≤ V
(BR)DSS
J
,
= 25°C (unless otherwise specified)
‚
…
„
†
‡
This is a calculated value limited to T
Calculated continuous current based on maximum allowable
Pulse width ≤ 400µs; duty cycle ≤ 2%.
This is a typical value at device destruction and represents
junction temperature. Package limitation current is 75A.
operation outside rated limits.
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
––– 1050† 264‡ mJ
–––
–––
–––
–––
–––
Min. Typ. Max. Units
2.0
55
44
–––
Intrinsic turn-on time is negligible (turn-on is dominated by L
0.057 –––
3247 –––
143
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
––– -100
–––
–––
–––
101
781
211
69
4.5
14
50
65
7.5
110
104
215
–––
390
1.3
–––
–––
250
100
146
–––
–––
–––
–––
–––
–––
–––
8.0
4.0
25
35
54
V/°C
nC
mΩ
ns
nC
µA
nA
ns
nH
pF
A
V
V
V
S
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs
V
Reference to 25°C, I
V
V
V
V
V
V
V
I
V
V
V
I
R
V
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
V
ƒ = 1.0MHz, See Fig. 5
I
D
D
AS
J
J
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
GS
DS
G
= 62A
= 62A
= 25°C, I
= 25°C, I
= 62A, L = 138µH
= 4.5Ω
= V
= 44V
= 25V
= 0V, I
= 10V, I
= 25V, I
= 55V, V
= 44V, V
= 20V
= -20V
= 10V, See Fig. 6 and 13
= 28V
= 10V, See Fig. 10 „
= 0V
GS
J
= 175°C.
, I
D
S
F
D
D
D
Conditions
= 250µA
= 62A
GS
GS
= 62A, V
Conditions
= 250µA
= 62A
= 62A„
„
= 0V
= 0V, T
D
GS
= 1mA
„
J
www.irf.com
= 0V
= 150°C
G
G
S
„
+L
D
S
D
)
S
D