M36P0R9070E0_06 STMICROELECTRONICS [STMicroelectronics], M36P0R9070E0_06 Datasheet - Page 21

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M36P0R9070E0_06

Manufacturer Part Number
M36P0R9070E0_06
Description
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package
Manufacturer
STMICROELECTRONICS [STMicroelectronics]
Datasheet
M36P0R9070E0
7
Note:
Part numbering
Table 7.
Devices are shipped from the factory with the memory content bits erased to ’1’. For a list of
available options (Speed, Package, etc.) or for further information on any aspect of this
device, please contact the STMicroelectronics Sales Office nearest to you.
Example:
Device Type
M36 = Multi-Chip Package (Multiple Flash + PSRAM)
Flash 1 Architecture
P = Multi-Level, Multiple Bank, Large Buffer
Flash 2 Architecture
0 = No Die
Operating Voltage
R = V
Flash 1 Density
9 = 512 Mbits
Flash 2 Density
0 = No Die
RAM 1 Density
7 = 128 Mbits
RAM 0 Density
0 = No Die
Parameter Blocks Location
E = Even Block Flash Memory Configuration
Product Version
0 = 90nm Flash technology, 96ns speed; PSRAM
Package
ZAC= stacked TFBGA107 C stacked footprint.
Option
Blank = Standard Packing
E = ECOPACK® Package, Standard packing
F = ECOPACK® Package, Tape & Reel packing
DDF
= V
CCP
Ordering information scheme
= V
DDQ
= 1.7 to 1.95V
M36 P
0
R
9
0
7
0
E
Part numbering
0
ZAC
21/23
E

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