BGA612_08 INFINEON [Infineon Technologies AG], BGA612_08 Datasheet - Page 5

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BGA612_08

Manufacturer Part Number
BGA612_08
Description
Silicon Germanium Broadband MMIC Amplifier
Manufacturer
INFINEON [Infineon Technologies AG]
Datasheet
Maximum Ratings
Table 1
Parameter
Device voltage
Device current
Current into pin In
Input power
Total power dissipation,
Junction temperature
Ambient temperature range
Storage temperature range
ESD capability all pins (HBM: JESD22-A114) V
1)Valid for Z
2)
Note: All Voltages refer to GND-Node
Thermal resistance
Table 2
Parameter
Junction - soldering point
1) For calculation of
2
Electrical characteristics at
V
Table 3
Parameter
Insertion power gain
Noise figure (
Output power at 1 dB gain
compression
Output third order intercept point
Input return loss
Output return loss
Total device current
Data Sheet
CC
T
= 5 V,
S
is measured on the ground lead at the soldering point
R
1)
S
Bias
Maximum ratings
Thermal resistance
Electrical Characteristics
Electrical Characteristics
Z
= Z
S
= 135
= 50
L
= 50
R
thJA
, Frequency = 2 GHz, unless otherwise specified
please refer to Application Note Thermal Resistance
T
1)
, V
S
< 105 °C
T
CC
A
= 25 °C (measured in test circuit specified in
= 5 V, R
2)
Bias
Symbol
|S
F
P
OIP
RL
RL
I
D
Symbol
R
50
-1dB
21
= 135
thJS
in
out
|
2
3
Symbol
V
I
I
P
P
T
T
T
D
in
J
A
STG
D
in
tot
ESD
Min.
5
Typ.
18.0
17.5
16.3
1.8
2.0
2.1
7
17
17
17
20
Values
Limit Value
2.8
80
0.7
10
225
150
-65... 150
-65... 150
1000
Value
200
Max.
Figure
2)
Electrical Characteristics
Unit
dB
dB
dB
dB
dB
dB
dBm
dBm
dB
dB
mA
Unit
V
mA
mA
dBm
mW
°C
°C
°C
V
Unit
K/W
Rev. 2.1, 2008-04-24
Note /
Test Condition
f
f
f
f
f
f
= 0.1 GHz
= 1.0 GHz
= 2.0 GHz
= 0.1 GHz
= 1.0 GHz
= 2.0 GHz
BGA612

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