BGA622_08 INFINEON [Infineon Technologies AG], BGA622_08 Datasheet
BGA622_08
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BGA622_08 Summary of contents
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Edition 2008-04-14 Published by Infineon Technologies AG, 81726 München, Germany Infineon Technologies AG 2008. © All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms ...
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BGA622, Silicon Germanium Wide Band Low Noise Amplifier with 2 kV ESD Protection Revision History: 2008-04-14, Rev. 2.2 Previous Version: 2005-11-16 Page Subjects (major changes since last revision) All Document layout change Trademarks ® SIEGET is a registered trademark of ...
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Silicon Germanium Wide Band Low Noise Amplifier with 2 kV ESD Protection 1 Silicon Germanium Wide Band Low Noise Amplifier with 2 kV ESD Protection Feature • High gain 15 1.575 GHz 21 ...
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Silicon Germanium Wide Band Low Noise Amplifier with 2 kV ESD Protection Maximum Ratings Table 1 Maximum ratings Parameter V Voltage at pin CC Voltage at pin Out Current into pin In Current into pin Out V Current into pin ...
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Electrical Characteristics 2.1 Electrical characteristics 2.75 V, Frequency = 1.575 GHz, unless otherwise specified CC Table 3 Electrical Characteristics Parameter Insertion power gain Insertion power gain (Off-State) Input return loss (On-State) Output return loss (On-State) Z ...
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Electrical characteristics 2.75 V, Frequency = 2.14 GHz, unless otherwise specified CC Table 4 Electrical Characteristics Parameter Insertion power gain Insertion power gain (Off-State) Input return loss (On-State) Output return loss (On-State) Z Noise figure ( ...
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Figure 3 Application Circuit for 1800 - 2500 MHz Data Sheet DC, Out 2.75V 47pF (DC-Block) RFC 150pF On/Off Switch DC, 2.75V 2.2nH (for improved input match) 47pF (DC-Block) In BGA622_Application_Circuit.vsd 8 BGA622 Electrical Characteristics Rev. 2.2, 2008-04-14 ...
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Measured Parameters 2 Power Gain | f( 2.75V 5.8mA CC tot− Frequency [GHz] ...
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Stability f( 2.75V 5.8mA CC tot− 3.5 3 2 Frequency [GHz] Input Compression Point 2.14GHz, ...
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Device Current I = f(V tot− parameter in °C A 8.5 8 7.5 7 6.5 6 5.5 5 2 Power Gain | f 2.14GHz ...
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Package Information 4 1 +0.1 0.3 Figure 4 Package Outline SOT343 Figure 5 Tape for SOT343 Data Sheet 2 ±0.2 B 1.3 ±0.1 0. +0.2 acc. to DIN 6784 2 +0.1 0.6 4 Pin 1 2.15 ...