SP000082281 INFINEON [Infineon Technologies AG], SP000082281 Datasheet - Page 6

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SP000082281

Manufacturer Part Number
SP000082281
Description
CoolMOS Power Transistor
Manufacturer
INFINEON [Infineon Technologies AG]
Datasheet
Rev. 2.0
9 Typ. gate charge
V
parameter: V
11 Avalanche energy
E
GS
AS
=f(T
250
200
150
100
=f(Q
50
10
0
9
8
7
6
5
4
3
2
1
0
20
j
0
); I
gate
D
); I
=3.4 A; V
DD
D
=5.2 A pulsed
60
5
DD
=50 V
Q
T
gate
100
j
10
[°C]
[nC]
120 V
400 V
140
15
page 6
20
180
10 Forward characteristics of reverse diode
I
parameter: T
12 Drain-source breakdown voltage
V
F
=f(V
BR(DSS)
700
660
620
580
540
10
10
10
10
SD
-1
-60
2
1
0
=f(T
)
0
j
); I
j
-20
D
=0.25 mA
0.5
20
150 °C
V
T
SD
j
60
[°C]
1
25 °C, 98%
[V]
25 °C
100
IPP60R385CP
1.5
150 °C, 98%
140
2006-04-04
180
2

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