BCM856BS/DG NXP [NXP Semiconductors], BCM856BS/DG Datasheet - Page 5

• Manufacturer Part Number: BCM856BS/DG
• Description: PNP/PNP matched double transistors
• Manufacturer: NXP [NXP Semiconductors]

NXP Semiconductors
BCM856BS_BCM856DS_1
Product data sheet
Table 8.
T
[1]
[2]
[3]
[4]
Symbol
V
C
C
f
NF
Per device
h
V
T
amb
FE1
BE
BE1
c
e
V
V
The smaller of the two values is taken as the numerator.
The smaller of the two values is subtracted from the larger value.
/h
= 25 C unless otherwise specified.
BEsat
BE
V
FE2
BE2
decreases by about 2 mV/K with increasing temperature.
decreases by about 1.7 mV/K with increasing temperature.
Characteristics
Parameter
base-emitter voltage
collector capacitance
emitter capacitance
transition frequency
noise figure
h
V
FE
BE
matching
matching
Rev. 01 — 7 August 2008
…continued
Conditions
V
I
V
I
V
I
f = 1 MHz
V
I
f = 1 MHz
V
I
f = 100 MHz
V
I
R
f = 10 Hz to
15.7 kHz
V
I
R
f = 1 kHz;
B = 200 Hz
V
I
V
I
C
C
E
C
C
C
C
C
C
CE
CE
CB
EB
CE
CE
CE
CE
CE
S
S
BCM856BS; BCM856DS
= i
= 2 mA
= 10 mA
= i
= 10 mA;
= 0.2 mA;
= 0.2 mA;
= 2 mA
= 2 mA
= 2 k ;
= 2 k ;
= 0.5 V;
= 5 V;
= 5 V;
= 10 V;
= 5 V;
= 5 V;
= 5 V;
= 5 V;
= 5 V;
e
c
= 0 A;
= 0 A;
PNP/PNP matched double transistors
[2]
[2]
[3]
[4]
Min
-
-
-
100
-
-
0.9
-
600
Typ
-
-
10
175
1.6
3.1
1
-
650
© NXP B.V. 2008. All rights reserved.
Max
2.2
-
-
-
-
-
2
700
760
Unit
mV
mV
pF
pF
MHz
dB
dB
mV
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