LPC660IM National Semiconductor, LPC660IM Datasheet

LPC660IM

Manufacturer Part Number

LPC660IM

Description

Manufacturer

National Semiconductor

Datasheets

1.LPC660AIM.pdf (17 pages)

2.LPC660IM.pdf (17 pages)

Specifications of LPC660IM

Case

SOP-14

Date_code

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Download datasheet (607Kb)

LPC660

Low Power CMOS Quad Operational Amplifier

General Description

The LPC660 CMOS Quad operational amplifier is ideal for

operation from a single supply. It features a wide range of

operating voltages from +5V to +15V and features rail-to-rail

output swing in addition to an input common-mode range

that includes ground. Performance limitations that have

plagued CMOS amplifiers in the past are not a problem with

this design. Input V

voltage gain (into 100 k and 5 k ) are all equal to or better

than widely accepted bipolar equivalents, while the power

supply requirement is typically less than 1 mW.

This chip is built with National’s advanced Double-Poly

Silicon-Gate CMOS process.

See the LPC662 datasheet for a Dual CMOS operational

amplifier and LPC661 datasheet for a single CMOS opera-

tional amplifier with these same features.

Applications

n High-impedance buffer

n Precision current-to-voltage converter

Connection Diagram

, drift, and broadband noise as well as

DS010547

14-Pin DIP/SO

Top View

n Long-term integrator

n High-impedance preamplifier

n Active filter

n Sample-and-Hold circuit

n Peak detector

Features

n Rail-to-rail output swing

n Micropower operation:

n Specified for 100 k

n High voltage gain:

n Low input offset voltage:

n Low offset voltage drift:

n Ultra low input bias current:

n Input common-mode includes V

n Operation range from +5V to +15V

n Low distortion:

n Slew rate:

n Full military temp. range available

DS010547-1

and 5 k

loads

−

0.01% at 1 kHz

www.national.com

March 1998

1.3 µV/˚C

0.11 V/µs

(1 mW)

120 dB

3 mV

2 fA

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