SST29SF040-70-4I-WH Silicon Storage Technology, Inc, SST29SF040-70-4I-WH Datasheet

SST29SF040-70-4I-WH

Manufacturer Part Number

SST29SF040-70-4I-WH

Description

Manufacturer

Silicon Storage Technology, Inc

Datasheet

1.SST29VF040-70-4I-WH.pdf (24 pages)

Specifications of SST29SF040-70-4I-WH

Case

TSOP32

Date_code

10+

Current page: 1 of 24
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FEATURES:

• Organized as 64K x8 / 128K x8 / 256K x8 / 512K x8

• Single Voltage Read and Write Operations

• Superior Reliability

• Low Power Consumption:

• Sector-Erase Capability

• Fast Read Access Time:

• Latched Address and Data

PRODUCT DESCRIPTION

The SST29SF512/010/020/040 and SST29VF512/010/

020/040 are 64K x8 / 128K x8 / 256K x8 / 512K x8 CMOS

Small-Sector Flash (SSF) manufactured with SST’s propri-

etary, high performance CMOS SuperFlash technology.

The split-gate cell design and thick oxide tunneling injector

attain better reliability and manufacturability compared with

alternate approaches. The SST29SFxxx devices write

(Program or Erase) with a 4.5-5.5V power supply. The

SST29VFxxx devices write (Program or Erase) with a 2.7-

3.6V power supply. These devices conform to JEDEC stan-

dard pinouts for x8 memories.

Featuring

SST29SFxxx and SST29VFxxx devices provide a maxi-

mum Byte-Program time of 20 µsec. To protect against

inadvertent write, they have on-chip hardware and Soft-

ware Data Protection schemes. Designed, manufactured,

and tested for a wide spectrum of applications, these

devices are offered with a guaranteed endurance of at least

10,000 cycles. Data retention is rated at greater than 100

years.

The SST29SFxxx and SST29VFxxx devices are suited for

applications that require convenient and economical updat-

ing of program, configuration, or data memory. For all sys-

tem applications, they significantly improve performance

S71160-05-000 5/01

512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Small-Sector Flash

SST29SF/VF512 / 010 / 020 / 0405.0 & 2.7V 512Kb / 1Mb / 2Mb / 4Mb (x8) Byte-Program, Small Erase Sector flash memories

– 5.0V-only for SST29SF512/010/020/040

– 2.7-3.6V for SST29VF512/010/020/040

– Endurance: 100,000 Cycles (typical)

– Greater than 100 years Data Retention

– Active Current: 10 mA (typical)

– Standby Current:

– Uniform 128 Byte sectors

– 55 ns

– 70 ns

30 µA (typical) for SST29SF512/010/020/040

1 µA (typical) for SST29VF512/010/020/040

high

SST29SF512 / SST29SF010 / SST29SF020 / SST29SF040

SST29VF512 / SST29VF010 / SST29VF020 / SST29VF040

performance

505

Byte-Program,

the

The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.

• Fast Erase and Byte-Program:

• Automatic Write Timing

• End-of-Write Detection

• TTL I/O Compatibility for SST29SFxxx

• CMOS I/O Compatibility for SST29VFxxx

• JEDEC Standard

• Packages Available

and reliability, while lowering power consumption. They

inherently use less energy during Erase and Program than

alternative flash technologies. The total energy consumed

is a function of the applied voltage, current, and time of

application. Since for any given voltage range, the Super-

Flash technology uses less current to program and has a

shorter erase time, the total energy consumed during any

Erase or Program operation is less than alternative flash

technologies. They also improve flexibility while lowering

the cost for program, data, and configuration storage appli-

cations.

The SuperFlash technology provides fixed Erase and Pro-

gram times, independent of the number of Erase/Program

cycles that have occurred. Therefore the system software

or hardware does not have to be modified or de-rated as is

necessary with alternative flash technologies, whose Erase

and Program times increase with accumulated Erase/Pro-

gram cycles.

To meet high density, surface mount requirements, the

SST29SFxxx and SST29VFxxx devices are offered in 32-

pin PLCC and 32-pin TSOP packages. A 600 mil, 32-pin

PDIP is also offered for SST29SFxxx devices. See Figures

1, 2, and 3 for pinouts.

– Sector-Erase Time: 18 ms (typical)

– Chip-Erase Time: 70 ms (typical)

– Byte-Program Time: 14 µs (typical)

– Chip Rewrite Time:

– Internal V

– Toggle Bit

– Data# Polling

– Flash EEPROM Pinouts and command sets

– 32-pin PLCC

– 32-pin TSOP (8mm x 14mm)

– 32-pin PDIP

1 second (typical) for SST29SF/VF512

2 seconds (typical) for SST29SF/VF010

4 seconds (typical) for SST29SF/VF020

8 seconds (typical) for SST29SF/VF040

Generation

These specifications are subject to change without notice.

SSF is a trademark of Silicon Storage Technology, Inc.

Preliminary Specifications

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