SST29SF040 SST [Silicon Storage Technology, Inc], SST29SF040 Datasheet

SST29SF040

Manufacturer Part Number

SST29SF040

Description

4 Mbit (x8) Small-Sector Flash

Manufacturer

SST [Silicon Storage Technology, Inc]

Datasheet

1.SST29SF040.pdf (22 pages)

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FEATURES:

• Organized as 512K x8

• Single Voltage Read and Write Operations

• Superior Reliability

• Low Power Consumption (typical values at 5 MHz)

• Sector-Erase Capability

• Fast Read Access Time:

• Latched Address and Data

PRODUCT DESCRIPTION

The SST29SF040 and SST29VF040 are 512K x8 CMOS

Small-Sector Flash (SSF) manufactured with SST’s propri-

etary, high performance CMOS SuperFlash technology.

The split-gate cell design and thick-oxide tunneling injector

attain better reliability and manufacturability compared with

alternate approaches. The SST29SF040 devices write

(Program or Erase) with a 4.5-5.5V power supply. The

SST29VF040 devices write (Program or Erase) with a 2.7-

3.6V power supply. These devices conform to JEDEC

standard pinouts for x8 memories.

Featuring

SST29SF040 and SST29VF040 devices provide a maxi-

mum Byte-Program time of 20 µsec. To protect against

inadvertent write, they have on-chip hardware and Soft-

ware Data Protection schemes. Designed, manufactured,

and tested for a wide spectrum of applications, these

devices are offered with a guaranteed endurance of at

least 10,000 cycles. Data retention is rated at greater than

100 years.

The SST29SF040 and SST29VF040 devices are suited

for applications that require convenient and economical

updating of program, configuration, or data memory. For

all system applications, they significantly improve perfor-

mance and reliability, while lowering power consumption.

They inherently use less energy during Erase and Pro-

gram than alternative flash technologies. The total energy

consumed is a function of the applied voltage, current, and

time of application. Since for any given voltage range, the

S71160-10-000

– 4.5-5.5V-only for SST29SF040

– 2.7-3.6V for SST29VF040

– Endurance: 100,000 Cycles (typical)

– Greater than 100 years Data Retention

– Active Current: 10 mA (typical)

– Standby Current:

– Uniform 128 Byte sectors

– 55 ns for SST29SF040

– 55 ns and 70 ns for SST29VF040

30 µA (typical) for SST29SF040

1 µA (typical) for SST29VF040

high

performance

SST29SF/VF0404Mb (x8) Byte-Program, Small-Sector flash memories

2/04

4 Mbit (x8) Small-Sector Flash

SST29SF040 / SST29VF040

Byte-Program,

the

The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.

• Fast Erase and Byte-Program:

• Automatic Write Timing

• End-of-Write Detection

• TTL I/O Compatibility for SST29SF040

• CMOS I/O Compatibility for SST29VF040

• JEDEC Standard

• Packages Available

SuperFlash technology uses less current to program and

has a shorter erase time, the total energy consumed dur-

ing any Erase or Program operation is less than alternative

flash technologies. They also improve flexibility while low-

ering the cost for program, data, and configuration storage

applications.

The SuperFlash technology provides fixed Erase and Pro-

gram times, independent of the number of Erase/Program

cycles that have occurred. Therefore the system software

or hardware does not have to be modified or de-rated as is

necessary with alternative flash technologies, whose

Erase and Program times increase with accumulated

Erase/Program cycles.

To meet high density, surface mount requirements, the

SST29SF040 and SST29VF040 devices are offered in 32-

lead PLCC and 32-lead TSOP packages. See Figures 1

and 2 for pin assignments.

Device Operation

Commands are used to initiate the memory operation func-

tions of the device. Commands are written to the device

using standard microprocessor write sequences. A com-

mand is written by asserting WE# low while keeping CE#

low. The address bus is latched on the falling edge of WE#

or CE#, whichever occurs last. The data bus is latched on

the rising edge of WE# or CE#, whichever occurs first.

– Sector-Erase Time: 18 ms (typical)

– Chip-Erase Time: 70 ms (typical)

– Byte-Program Time: 14 µs (typical)

– Chip Rewrite Time: 8 seconds (typical)

– Internal V

– Toggle Bit

– Data# Polling

– Flash EEPROM Pinouts and command sets

– 32-lead PLCC

– 32-lead TSOP (8mm x 14mm)

Generation

These specifications are subject to change without notice.

SSF is a trademark of Silicon Storage Technology, Inc.

Data Sheet

Related parts for SST29SF040

SST29SF040 Summary of contents

Page 1

... Erase and Program times increase with accumulated Erase/Program cycles. To meet high density, surface mount requirements, the SST29SF040 and SST29VF040 devices are offered in 32- lead PLCC and 32-lead TSOP packages. See Figures 1 and 2 for pin assignments. Device Operation Commands are used to initiate the memory operation func- tions of the device ...

Page 2

... Program operation will be ignored. Sector-Erase Operation The Sector-Erase operation allows the system to erase the device on a sector-by-sector basis. The SST29SF040 and SST29VF040 offer Sector-Erase mode. The sector archi- tecture is based on uniform sector size of 128 Bytes. The Sector-Erase operation is initiated by executing a six-byte- command sequence with Sector-Erase command (20H) and sector address (SA) in the last bus cycle ...

Page 3

... T Product Identification The Product Identification mode identifies the devices as SST29SF040 or SST29VF040 and manufacturer as SST. This mode may be accessed by software operations. Users may use the Software Product Identification operation to identify the part (i.e., using the device ID) when using multi- ple manufacturers in the same socket ...

Page 4

... Standard Pinout 6 7 Top View 8 9 Die 32- TSOP ( LEAD Mbit Small-Sector Flash SST29SF040 / SST29VF040 SuperFlash Memory Y-Decoder 1160 B1.0 A14 A13 A8 A9 A11 OE# A10 CE# DQ7 1160 32-plcc P01.0 32 OE# 31 A10 CE DQ7 28 ...

Page 5

... Program V IL Erase V IL Standby V IH Write Inhibit X X Product Identification Software Mode can but no other value ©2004 Silicon Storage Technology, Inc. 4.5-5.5V for SST29SF040 2.7-3.6V for SST29VF040 WE OUT ...

Page 6

... The device does not remain in Software Product ID mode if powered down. 5. With SST Manufacturer’ BFH, is read with SST29SF040 Device ID = 13H, is read with A SST29VF040 Device ID = 14H, is read with A 6. Both Software ID Exit operations are equivalent ©2004 Silicon Storage Technology, Inc. S EQUENCE ...

Page 7

... Mbit Small-Sector Flash SST29SF040 / SST29VF040 Absolute Maximum Stress Ratings (Applied conditions greater than those listed under “Absolute Maximum Stress Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these conditions or conditions greater than those defined in the operational sections of this data sheet is not implied. Exposure to absolute maximum stress rating conditions may affect device reliability.) Temperature Under Bias . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55° ...

Page 8

... OWER UP IMINGS Minimum Specification 10,000 100 100 + Mbit Small-Sector Flash SST29SF040 / SST29VF040 / f=5 MHz, ILT IHT =V Max DD , OE#=WE#=V , all I/Os open OE#= Max IHC DD DD =GND Max =GND ...

Page 9

... Mbit Small-Sector Flash SST29SF040 / SST29VF040 AC CHARACTERISTICS TABLE 10 EAD YCLE IMING V = 4.5-5.5V SST29SF040 FOR DD Symbol Parameter T Read Cycle Time RC T Chip Enable Access Time CE T Address Access Time AA T Output Enable Access Time CE# Low to Active Output CLZ 1 T OE# Low to Active Output ...

Page 10

... WPH DATA SW1 SW2 BYTE (ADDR/DATA ROGRAM YCLE IMING IAGRAM 10 4 Mbit Small-Sector Flash SST29SF040 / SST29VF040 OHZ T CHZ T OH DATA VALID Internal Program Operation Starts 1160 F04.0 S71160-10-000 HIGH-Z 1160 F03.0 2/04 ...

Page 11

... Mbit Small-Sector Flash SST29SF040 / SST29VF040 555 ADDRESS OE# WE# DQ 7-0 AA SW0 Note Most Significant Address for SST29SF/VF040 FIGURE 5: CE# C ONTROLLED ADDRESS A MS-0 CE# OE# WE Note Most Significant Address for SST29SF/VF040 FIGURE ...

Page 12

... Six-Byte Code for Sector-Erase 2AA 555 555 2AA SW1 SW2 SW3 SW4 ECTOR RASE IMING IAGRAM 12 4 Mbit Small-Sector Flash SST29SF040 / SST29VF040 T OES TWO READ CYCLES 1160 F07.0 WITH SAME OUTPUTS SW5 1160 F08.0 S71160-10-000 2/04 ...

Page 13

... for SST29SF/VF040 FIGURE 9: WE# C ONTROLLED Three-Byte Sequence for ADDRESS A 14-0 555 CE# OE WE# DQ 7-0 AA SW0 Note: Device ID = 13H for SST29SF040 FIGURE 10 OFTWARE NTRY AND ©2004 Silicon Storage Technology, Inc. Six-Byte Code for Chip-Erase 2AA 555 555 2AA 55 80 ...

Page 14

... Three-Byte Sequence for Sofware ID Exit and Reset 555 ADDRESS A 14 7-0 CE# OE WE# SW0 FIGURE 11 OFTWARE XIT AND ©2004 Silicon Storage Technology, Inc. 2AA 555 IDA T WHP SW1 SW2 R ESET 14 4 Mbit Small-Sector Flash SST29SF040 / SST29VF040 1160 F11.1 S71160-10-000 2/04 ...

Page 15

... Mbit Small-Sector Flash SST29SF040 / SST29VF040 V IHT INPUT V ILT AC test inputs are driven at V (3.0 V) for a logic “1” and V IHT inputs and outputs are V (1.5 V) and V IT FIGURE 12 NPUT UTPUT V IHT INPUT V ILT AC test inputs are driven at V (0.9 V IHT for inputs and outputs are V (0 ...

Page 16

... Data Sheet FIGURE 15 YTE ROGRAM LGORITHM ©2004 Silicon Storage Technology, Inc. 4 Mbit Small-Sector Flash SST29SF040 / SST29VF040 Start Load data: AAH Address: 555H Load data: 55H Address: 2AAH Load data: A0H Address: 555H Load Byte Address/Byte Data Wait for end of ...

Page 17

... Mbit Small-Sector Flash SST29SF040 / SST29VF040 Internal Timer Byte- Program/Erase Initiated Wait SCE Program/Erase Completed FIGURE 16 AIT PTIONS ©2004 Silicon Storage Technology, Inc. Toggle Bit Byte- Program/Erase Initiated Read byte Read same No byte No Does DQ 6 match? Yes Program/Erase Completed ...

Page 18

... Load data: AAH Address: 555H Load data: 55H Address: 2AAH Load data: F0H Address: 555H Wait T IDA Return to normal operation F LOWCHARTS 18 4 Mbit Small-Sector Flash SST29SF040 / SST29VF040 Load data: F0H Address: XXH Wait T IDA Return to normal operation 1160 F17.0 S71160-10-000 2/04 ...

Page 19

... Mbit Small-Sector Flash SST29SF040 / SST29VF040 Command Sequence Load data: AAH Address: 555H Load data: 55H Address: 2AAH Load data: 80H Address: 555H Load data: AAH Address: 555H Load data: 55H Address: 2AAH Load data: 10H Address: 555H FIGURE 18 RASE OMMAND © ...

Page 20

... Data Sheet PRODUCT ORDERING INFORMATION SST 29 VF 040 - XXXX - XXX Valid combinations for SST29SF040 SST29SF040-55-4C-NH SST29SF040-55-4C-WH SST29SF040-55-4C-NHE SST29SF040-55-4C-WHE SST29SF040-55-4I-NH SST29SF040-55-4I-WH SST29SF040-55-4I-NHE SST29SF040-55-4I-WHE Valid combinations for SST29VF040 SST29VF040-55-4C-NH SST29VF040-55-4C-WH SST29VF040-55-4C-NHE SST29VF040-55-4C-WHE SST29VF040-70-4C-NH SST29VF040-70-4C-WH SST29VF040-70-4C-NHE ...

Page 21

... Mbit Small-Sector Flash SST29SF040 / SST29VF040 PACKAGING DIAGRAMS TOP VIEW .495 .485 .453 Optional .447 Pin #1 .048 Identifier .042 .042 .048 .595 .553 .585 .547 .050 BSC Note: 1. Complies with JEDEC publication 95 MS-016 AE dimensions, although some dimensions may be more stringent. 2. All linear dimensions are in inches (max/min). ...

Page 22

... Silicon Storage Technology, Inc. Description and 1.5V instead of 1. 2.1 mA instead of 2.1 µA in Table 5 on page 7 OL www.SuperFlash.com or www.sst.com 22 4 Mbit Small-Sector Flash SST29SF040 / SST29VF040 Date May 2002 Mar 2003 DD Apr 2003 Aug 2003 Dec 2003 Feb 2004 S71160-10-000 2/04 ...

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