MBM29F016-12PFTR Fujitsu, MBM29F016-12PFTR Datasheet
MBM29F016-12PFTR
Manufacturer Part Number
MBM29F016-12PFTR
Description
Manufacturer
Fujitsu
Datasheet
1.MBM29F016-12PFTR.pdf
(43 pages)
Specifications of MBM29F016-12PFTR
Case
TSOP
Date_code
95+
FUJITSU SEMICONDUCTOR
FLASH MEMORY
CMOS
16 M ( 2 M 8 ) BIT
MBM29F016
Embedded Erase
• Single 5.0 V read, write, and erase
• Compatible with JEDEC-standard commands
• 48-pin TSOP
• Minimum 100,000 write/erase cycles
• High performance
• Sector erase architecture
• Embedded Erase
• Embedded Program
• Data Polling and Toggle Bit feature for detection of program or erase cycle completion
• Ready/BUSY output (RY/BY)
• Low power consumption
• Enhanced power management for standby mode
• Low V
• Hardware RESET pin
• Erase Suspend/Resume
• Sector group protection
DISTINCTIVE CHARACTERISTICS
Minimizes system level power requirements
Pinout and software compatible with single-power supply Flash
Superior inadvertent write protection
90 ns maximum access time
Uniform sectors of 64K bytes each
Any combination of sectors can be erased. Also supports full chip erase.
Automatically pre-programs and erases the chip or any sector
Automatically programs and verifies data at specified address
Hardware method for detection of program or erase cycle completion
40 mA maximum active read current
60 mA maximum program/erase current
<1 A typical standby current
Standard access time from standby mode
Resets internal state machine to the read mode
Supports reading or programming data to a sector not being erased
Hardware method that disables any combination of sector groups from write or erase operation (a sector group
consists of 4 adjacent sectors of 64K bytes each)
DATA SHEET
CC
write inhibit
and Embedded Program
Algorithms
Algorithms
3.2 V
are trademarks of Advanced Micro Devices, Inc.
- 90/-12
DS05–20807–3E
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