AM41DL3228GB40IS AMD [Advanced Micro Devices], AM41DL3228GB40IS Datasheet - Page 59
AM41DL3228GB40IS
Manufacturer Part Number
AM41DL3228GB40IS
Description
32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM
Manufacturer
AMD [Advanced Micro Devices]
Datasheet
1.AM41DL3228GB40IS.pdf
(66 pages)
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AC CHARACTERISTICS
SRAM Write Cycle
Notes:
1. WE# controlled, if CIOs is low, ignore UB#s and LB#s timing.
2. t
3. t
4. t
5. A write occurs during the overlap (t
58
Parameter
asserting UB#s or LB#s for a single byte operation or simultaneously asserting UB#s and LB#s for a double byte operation. A
write ends at the earliest transition when CE1#s goes high and WE# goes high. The t
to the end of write.
CW
WR
AS
Symbol
t
is measured from the address valid to the beginning of write.
t
t
t
t
t
t
t
t
WHZ
t
t
is measured from CE1#s going low to the end of write.
is measured from the end of write to the address change. t
WC
BW
WP
WR
DW
OW
Cw
AW
DH
AS
Address
CE1#s
CE2s
WE#
Data In
Data Out
Description
Write Cycle Time
Chip Enable to End of Write
Address Setup Time
Address Valid to End of Write
UB#s, LB#s to End of Write
Write Pulse Time
Write Recovery Time
Write to Output High-Z
Data to Write Time Overlap
Data Hold from Write Time
End Write to Output Low-Z
Figure 30. SRAM Write Cycle—WE# Control
WP
Data Undefined
) of low CE#1 and low WE#. A write begins when CE1#s goes low and WE# goes low when
High-Z
(See Note 3)
P R E L I M I N A R Y
t
AS
Am41DL32x8G
t
WHZ
(See Note 1)
(See Note 1)
WR
t
AW
applied in case a write ends as CE1#s or WE# going high.
(See Note 4)
t
WC
t
t
CW
CW
Max
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
min
t
WP
t
DW
Data Valid
WP
70
70
60
60
60
50
20
30
is measured from the beginning of write
0
Speed Options
t
DH
t
t
WR
OW
0
0
0
5
High-Z
85
85
70
70
70
60
25
35
0
September 5, 2002
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
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