AM49DL320BGB701S AMD [Advanced Micro Devices], AM49DL320BGB701S Datasheet - Page 54

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AM49DL320BGB701S

Manufacturer Part Number
AM49DL320BGB701S
Description
32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 32 Mbit (2M x 16-Bit) Pseudo Static RAM
Manufacturer
AMD [Advanced Micro Devices]
Datasheet
FLASH AC CHARACTERISTICS
June 25, 2002
Notes:
1. Figure indicates last two bus cycles of a program or erase operation.
2. PA = program address, SADD = sector address, PD = program data.
3. DQ7# is the complement of the data written to the device. D
4. Waveforms are for the word mode.
Figure 27. Flash Alternate CE#f Controlled Write (Erase/Program) Operation Timings
Addresses
RESET#
RY/BY#
CE#f
WE#
Data
OE#
t
RH
555 for program
2AA for erase
t
t
t
WS
WH
WC
A0 for program
55 for erase
t
GHEL
P R E L I M I N A R Y
t
t
t
DS
CP
PA for program
SADD for sector erase
555 for chip erase
CPH
t
AS
t
DH
Am49DL320BG
t
AH
OUT
PD for program
30 for sector erase
10 for chip erase
is the data written to the device.
t
BUSY
t
WHWH1 or 2
Data# Polling
DQ7#
PA
D
OUT
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