K4D263238A-GC36 SAMSUNG [Samsung semiconductor], K4D263238A-GC36 Datasheet - Page 16

• Manufacturer Part Number: K4D263238A-GC36
• Description: 1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL
• Manufacturer: SAMSUNG [Samsung semiconductor]

K4D263238A-GC
COMMAND
K4D263238A-GC40
K4D263238A-GC45
K4D263238A-GC50
Simplified Timing(2) @ BL=4
(A0~A7,
A9,A10)
250MHz ( 4.0ns )
222MHz ( 4.5ns )
200MHz ( 5.0ns )
222MHz ( 4.5ns )
200MHz ( 5.0ns )
200MHz ( 5.0ns )
BA[1:0]
CK, CK
A8/AP
ADDR
DQS
WE
DQ
DM
Frequency
Frequency
Frequency
ACTIVEA
BAa
Ra
Ra
Ra
0
1
tRCD
2
Normal Write Burst
Cas Latency
Cas Latency
Cas Latency
WRITEA
BAa
Ca
3
(@ BL=4)
4/3
tRAS
4
4
3
3
3
Da0 Da1 Da2 Da3
4
5
tRC
tRC
tRC
tRC
15
13
12
12
12
13
6
7
PRECH
tRFC
tRFC
tRFC
BAa
17
15
14
15
14
14
8
9
tRP
tRAS
tRAS
tRAS
10
9
8
9
8
8
10
- 16 -
ACTIVEA
BAa
Ra
Multi Bank Interleaving Write Burst
Ra
11
tRCDRD tRCDWR
tRCDRD tRCDWR
tRCDRD tRCDWR
tRRD
5
4
4
4
4
4
12
ACTIVEB WRITEA
Rb
Rb
BAb
(@ BL=4)
13
Ca
BAa
3
2
2
2
2
2
14
Da0 Da1 Da2 Da3
15
WRITEB
tRP
tRP
tRP
Cb
BAb
5
4
4
4
4
4
16
128M DDR SDRAM
Db0 Db1
17
Db2
tRRD
tRRD
tRRD
Rev. 2.0 (Jan. 2003)
Db3
3
2
2
2
2
2
18
19
tDAL
tDAL
tDAL
8
7
7
7
7
7
20
21
Unit
tCK
tCK
tCK
Unit
tCK
Unit
tCK
tCK
22