K4S640432D-TC/L10 SAMSUNG [Samsung semiconductor], K4S640432D-TC/L10 Datasheet - Page 4

• Manufacturer Part Number: K4S640432D-TC/L10
• Description: 64Mbit SDRAM 4M x 4Bit x 4 Banks Synchronous DRAM LVTTL
• Manufacturer: SAMSUNG [Samsung semiconductor]

Note :
Notes :
ABSOLUTE MAXIMUM RATINGS
DC OPERATING CONDITIONS
CAPACITANCE
Recommended operating conditions (Voltage referenced to V
K4S640432D
Notes :
Clock
RAS, CAS, WE, CS, CKE, DQM
Address
DQ
Voltage on any pin relative to V
Voltage on V
Storage temperature
Power dissipation
Short circuit current
Supply voltage
Input logic high voltage
Input logic low voltage
Output logic high voltage
Output logic low voltage
Input leakage current
0
~ DQ
Permanent device damage may occur if "ASOLUTE MAXIMUM RATINGS" are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
1. -75 only specify a maximum value of 3.5pF
2. -75 only specify a maximum value of 3.8pF
3. -75 only specify a maximum value of 6.0pF
1. V
2. V
3. Any input 0V
Parameter
3
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.
IH
IL
DD
(min) = -2.0V AC. The undershoot voltage duration is
(max) = 5.6V AC.The overshoot voltage duration is
Parameter
supply relative to V
Pin
(V
DD
V
= 3.3V, T
IN
SS
V
DDQ
SS
A
V
.
= 23 C, f = 1MHz, V
Symbol
DD
V
V
V
V
, V
I
OH
OL
LI
IH
IL
DDQ
Symbol
C
C
C
V
V
C
ADD
OUT
DD
Symbol
CLK
IN
IN
T
-0.3
Min
-10
3.0
2.0
2.4
, V
I
, V
P
STG
OS
-
D
REF
OUT
DDQ
SS
=1.4V 200 mV)
= 0V, T
3ns.
3ns.
A
Min
2.5
2.5
2.5
4.0
Typ
= 0 to 70 C)
3.3
3.0
0
-
-
-
V
-55 ~ +150
DD
-1.0 ~ 4.6
-1.0 ~ 4.6
Max
3.6
0.8
0.4
Max
10
4.0
5.0
5.0
6.5
Value
-
+0.3
50
1
Rev. 0.0 Jun. 1999
Unit
uA
V
V
V
V
V
CMOS SDRAM
Unit
pF
pF
pF
pF
I
I
OH
OL
Unit
mA
W
V
V
Note
C
= -2mA
= 2mA
1
2
3
Note
1
2
2
3