K4S640432D-TC/L10 SAMSUNG [Samsung semiconductor], K4S640432D-TC/L10 Datasheet - Page 6

• Manufacturer Part Number: K4S640432D-TC/L10
• Description: 64Mbit SDRAM 4M x 4Bit x 4 Banks Synchronous DRAM LVTTL
• Manufacturer: SAMSUNG [Samsung semiconductor]

OPERATING AC PARAMETER
AC OPERATING TEST CONDITIONS
(AC operating conditions unless otherwise noted)
Notes :
K4S640432D
AC input levels (Vih/Vil)
Input timing measurement reference level
Input rise and fall time
Output timing measurement reference level
Output load condition
Row active to row active delay
RAS to CAS delay
Row precharge time
Row active time
Row cycle time
Last data in to row precharge
Last data in to Active delay
Last data in to new col. address delay
Last data in to burst stop
Col. address to col. address delay
Number of valid output data
Output
1. The minimum number of clock cycles is determined by dividing the minimum time required with clock cycle time
2. Minimum delay is required to complete write.
3. All parts allow every cycle column address change.
4. In case of row precharge interrupt, auto precharge and read burst stop.
5. For -80/1H/1L/10, tRDL=1CLK and tDAL=1CLK+20ns is also supported .
(Fig. 1) DC output load circuit
and then rounding off to the next higher integer.
SAMSUNG recommands tRDL=2CLK and tDAL=2CLK + 20ns.
870
Parameter
Parameter
3.3V
1200
50pF
CAS latency=3
CAS latency=2
V
V
OH
OL
(DC) = 0.4V, I
(DC) = 2.4V, I
(V
DD
t
t
t
t
t
t
t
t
t
RAS
RRD
RCD
t
CCD
t
RAS
RDL
CDL
DAL
BDL
Symbol
RC
RP
= 3.3V
(min)
(min)
(max)
(min)
(min)
(min)
(min)
(min)
(min)
(min)
(min)
OL
OH
0.3V, T
= 2mA
= -2mA
- 75
15
20
20
45
65
A
= 0 to 70 C)
See Fig. 2
-
tr/tf = 1/1
2.4/0.4
Value
1.4
1.4
- 80
Output
16
20
20
48
68
2 CLK + 20 ns
Version
100
- 1H
20
20
20
50
70
2
1
1
1
2
(Fig. 2) AC output load circuit
- 1L
Z0 = 50
20
20
20
50
70
1
Rev. 0.0 Jun. 1999
CMOS SDRAM
-10
20
24
24
50
80
Vtt = 1.4V
CLK
CLK
CLK
CLK
Unit
Unit
50
ns
50pF
ns
ns
ns
ns
us
ns
ea
V
V
V
-
Note
2,5
1
1
1
1
1
5
2
2
3
4