K4H510638E-TC/LA2 SAMSUNG [Samsung semiconductor], K4H510638E-TC/LA2 Datasheet - Page 16
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K4H510638E-TC/LA2
Manufacturer Part Number
K4H510638E-TC/LA2
Description
Stacked 512Mb E-die DDR SDRAM Specification (x4/x8)
Manufacturer
SAMSUNG [Samsung semiconductor]
Datasheet
1.K4H510638E-TCLA2.pdf
(22 pages)
Table 4 : Input/Output Setup & Hold Derating for Rise/Fall Delta Slew Rate
Table 5 : Output Slew Rate Characteristice (X4, X8 Devices only)
Table 6 : Output Slew Rate Characteristice (X16 Devices only)
Table 7 : Output Slew Rate Matching Ratio Characteristics
DDR SDRAM stacked 512Mb E-die (x4/x8)
PARAMETER
Output Slew Rate Matching Ratio (Pullup to Pulldown)
Slew Rate Characteristic
Slew Rate Characteristic
Delta Slew Rate
+/- 0.25 V/ns
+/- 0.0 V/ns
+/- 0.5 V/ns
Pullup Slew Rate
Pullup Slew Rate
Pulldown slew
Pulldown slew
AC CHARACTERISTICS
+100
tDS
+50
0
Typical Range
Typical Range
1.2 ~ 2.5
1.2 ~ 2.5
1.2 ~ 2.5
1.2 ~ 2.5
(V/ns)
(V/ns)
+100
tDH
+50
0
Minimum
Minimum
(V/ns)
(V/ns)
1.0
0.7
1.0
0.7
TBD
MIN
DDR266
Units
ps
ps
ps
Maximum
Maximum
MAX
TBD
(V/ns)
(V/ns)
4.5
4.5
5.0
5.0
Notes
0.67
MIN
j
j
j
DDR200
a,c,d,f,g,h
b,c,d,f,g,h
a,c,d,f,g,h
b,c,d,f,g,h
Notes
Notes
MAX
1.5
Notes
e,m
Rev. 1.0 July. 2003
DDR SDRAM