K4H510638E-TC/LA2 SAMSUNG [Samsung semiconductor], K4H510638E-TC/LA2 Datasheet - Page 21
![no-image](/images/no-image-200.jpg)
K4H510638E-TC/LA2
Manufacturer Part Number
K4H510638E-TC/LA2
Description
Stacked 512Mb E-die DDR SDRAM Specification (x4/x8)
Manufacturer
SAMSUNG [Samsung semiconductor]
Datasheet
1.K4H510638E-TCLA2.pdf
(22 pages)
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DDR SDRAM stacked 512Mb E-die (x4/x8)
Figure 4. I/V characteristics for input/output buffers:Pull up(above) and pull down(below)
90
80
70
60
50
40
30
20
10
-10
-20
-30
-40
-50
-60
-70
-80
-90
0
0
0.0
0.0
Pulldown Characteristics for Weak Output Driver
Pullup Characteristics for Weak Output Driver
1.0
1.0
2.0
2.0
Vout(V)
Vout(V)
Rev. 1.0 July. 2003
Typical High
Maximum
Typical Low
Minumum
Typical Low
Typical High
Maximum
Minimum
DDR SDRAM
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