K4S510732B-TC1H SAMSUNG [Samsung semiconductor], K4S510732B-TC1H Datasheet - Page 6

• Manufacturer Part Number: K4S510732B-TC1H
• Description: Stacked 512Mbit SDRAM
• Manufacturer: SAMSUNG [Samsung semiconductor]

DC CHARACTERISTICS
(Recommended operating condition unless otherwise noted, T
K4S510732B
Notes :
Operating current
(One bank active)
Precharge standby current in
power-down mode
Precharge standby current in
non power-down mode
Active Standby current
in power-down mode
Active standby current in
non power-down mode
(One bank active)
Operating current
(Burst mode)
Refresh current
Self refresh current
1. Measured with outputs open.
2. Refresh period is 64ms.
3. K4S510732B-TC**
4. K4S510732B-TL**
5. Unless otherwise noticed, input swing level is CMOS(V
Parameter
Symbol
I
I
I
I
CC2
I
CC2
CC3
I
CC3
I
I
CC2
CC2
CC3
CC3
I
I
I
I
CC1
CC4
CC5
CC6
NS
NS
PS
PS
N
N
P
P
Burst length = 1
t
I
CKE
CKE & CLK
CKE
Input signals are changed one time during 20ns
CKE
Input signals are stable
CKE
CKE & CLK
CKE
Input signals are changed one time during 20ns
CKE
Input signals are stable
I
Page burst
4banks activated.
t
t
CKE
RC
O
O
CCD
RC
= 0 mA
= 0 mA
= 2CLKs
t
t
RC
RC
V
V
V
V
V
V
0.2V
IH
IH
IH
IH
(min)
IL
IL
(min)
(max), t
(min), CS
(min), CLK
(max), t
(min), CS
(min), CLK
V
V
IL
IL
Test Condition
(max), t
(max), t
CC
CC
IH
= 10ns
= 10ns
A
V
V
/V
= 0 to 70 C)
IH
V
IH
V
IL
CC
CC
IL
IL
(min), t
(min), t
=V
(max), t
(max), t
=
=
DDQ
CC
CC
/V
CC
CC
SSQ
= 10ns
= 10ns
=
=
).
C
L
135
170
235
-75
Version
-1H
125
145
225
30
25
45
40
4
4
8
8
6
4
Rev. 0.0 Feb.2001
CMOS SDRAM
125
145
225
-1L
Preliminary
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
Note
1
1
2
3
4