K4H510838B-N SAMSUNG [Samsung semiconductor], K4H510838B-N Datasheet - Page 5

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K4H510838B-N

Manufacturer Part Number
K4H510838B-N
Description
512Mb B-die DDR SDRAM Specification 54 sTSOP-II (400mil x 441mil)
Manufacturer
SAMSUNG [Samsung semiconductor]
Datasheet
DDR SDRAM 512Mb B-die (x8)
4.0 Pin Description
AP/A10
VDDQ
VDDQ
VDDQ
VSSQ
VSSQ
VDD
VDD
VDD
DQ0
DQ1
DQ2
DQ3
CAS
RAS
BA0
BA1
WE
NC
NC
NC
CS
NC
A0
A1
A2
A3
DM is internally loaded to match DQ and DQS identically.
Organization
64Mx8
23
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
24
25
26
27
Row & Column address configuration
512Mb sTSOP(II)-400 Package Pinout
(0.4 mm Pin Pitch)
54 Pin sTSOP(II)
Auto Precharge
400mil x 441mil
64Mb x 8
Bank Address
Row Address
Row Address
BA0-BA1
A0-A12
A0~A12
A10
Column Address
A0-A9, A11
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
Rev. 1.3 June. 2005
VSS
DQ7
VSSQ
DQ6
VDDQ
DQ5
VSSQ
DQ4
VDDQ
NC
VSSQ
DQS
VREF
VSS
DM
CK
CK
CKE
A12
A11
A9
A8
A7
A6
A5
A4
VSS
DDR SDRAM

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