K4S64323LF-DG/S15 SAMSUNG [Samsung semiconductor], K4S64323LF-DG/S15 Datasheet - Page 4

• Manufacturer Part Number: K4S64323LF-DG/S15
• Description: 2Mx32 Mobile SDRAM 90FBGA
• Manufacturer: SAMSUNG [Samsung semiconductor]

K4S64323LF-S(D)G/S
DC OPERATING CONDITIONS
ABSOLUTE MAXIMUM RATINGS
Notes :
Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
Recommended operating conditions (Voltage referenced to V
Notes :
1. V
2. V
3. Any input 0V V
4. Dout is disabled, 0V
CAPACITANCE
Supply voltage
Input logic high voltage
Input logic low voltage
Output logic high voltage
Output logic low voltage
Input leakage current
Clock
RAS, CAS, WE, CS, CKE, DQM
Address(A
D Q
Voltage on any pin relative to Vss
Voltage on V
Storage temperature
Power dissipation
Short circuit current
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with tri-state outputs.
IH
IL
0
~ DQ
(min) = -2.0V AC. The undershoot voltage duration is
(max) = 3.0V AC.The overshoot voltage duration is 3ns.
Parameter
31
0
~ A
Parameter
DD
10,
supply relative to Vss
IN
BA
Pin
0
(V
V
~ BA
DDQ
V
DD
OUT
= 2.5V, T
.
1
)
V
0
~ DQM
DDQ.
A
= 23 C, f = 1MHz, V
Symbol
3
V
V
V
V
V
V
I
DDQ
D D
O H
OL
LI
I H
IL
Symbol
0.8 x V
V
C
C
C
V
V
C
DDQ
Symbol
ADD
OUT
CLK
D D
IN
IN
T
1.65
Min
-0.3
2.3
-10
, V
I
, V
P
STG
OS
-
REF
D
-0.2V
OUT
DDQ
DDQ
SS
3ns.
=0.9V
= 0V, T
A
50 mV)
Min
= -25 C to 85 C)
Typ
2.5
-
-
-
-
0
-
-
-
-
-
V
DDQ
-55 ~ +150
-1.0 ~ 3.6
-1.0 ~ 3.6
Max
2.7
2.7
0.3
0.2
Max
10
4.0
4.0
4.0
6.0
Value
-
+ 0.3
50
1
Unit
uA
V
V
V
V
V
V
Unit
CMOS SDRAM
pF
pF
pF
pF
Rev. 1.5 Dec 2002
I
I
O H
OL
Unit
mA
W
V
V
= -0.1mA
Note
= 0.1mA
C
Note
1
2
3