K4S64323LF-DG/S15 SAMSUNG [Samsung semiconductor], K4S64323LF-DG/S15 Datasheet - Page 5

• Manufacturer Part Number: K4S64323LF-DG/S15
• Description: 2Mx32 Mobile SDRAM 90FBGA
• Manufacturer: SAMSUNG [Samsung semiconductor]

K4S64323LF-S(D)G/S
DC CHARACTERISTICS
Recommended operating conditions (Voltage referenced to V
Notes :
1. Measured with outputs open.
2. Refresh period is 64ms.
3. K4S64323LF-S(D)G**
4. K4S64323LF-S(D)S**
5. Unless otherwise noted, input swing IeveI is CMOS(V
Operating Current
(One Bank Active)
Precharge Standby Current
in power-down mode
Precharge Standby Current
in non power-down mode
Active Standby Current
in power-down mode
Active Standby Current
in non power-down mode
(One Bank Active)
Operating Current
Refresh Current
Self Refresh Current
Parameter
I
I
I
I
CC2
C C 2
CC3
C C 3
Sym-
I
I
I
I
C C 2
CC2
C C 3
CC3
I
I
I
I
bol
C C 1
C C 4
C C 5
C C 6
PS CKE & CLK V
NS
PS CKE & CLK V
NS
P
N
P
N
CKE V
CKE V
Input signals are changed one time during 20ns
CKE V
Input signals are stable
CKE V
CKE V
Input signals are changed one time during 20ns
CKE V
Input signals are stable
I
t
CKE 0.2V
O
RC
Burst length = 1
t
I
RC
O
= 0 mA ,Page burst
= 0 mA
t
t
R C
R C
IL
IH
IH
IL
IH
IH
(min)
(min)
(max), t
(max), t
(min), CS
(min), CLK
(min), CS
(min), CLK
IL
IL
Test Condition
IH
(max), t
(max), t
CC
CC
/V
IL
= 10ns
= 10ns
SS
V
V
=V
V
V
IH
IH
= 0V, T
CC
CC
IL
IL
DDQ
(min), t
(min), t
(max), t
(max), t
=
=
-S(D)G
-S(D)S
/V
TCSR Range
SSQ).
A
CC
CC
= -25 C to 85 C)
CC
CC
= 10ns
= 10ns
=
=
4 Banks
2 Banks
1 Bank
4 Banks
2 Banks
1 Bank
115
-75
70
85
Max 45 C
235
210
195
130
105
90
-1H
110
70
70
Version
0.5
0.5
10
20
20
7
5
5
100
-1L
CMOS SDRAM
65
70
Max 85 C
Rev. 1.5 Dec 2002
350
290
270
230
170
150
-15
60
60
80
Unit Note
mA
mA
mA
mA
mA
mA
mA
mA
uA
uA
C
1
1
2
3
4