K4S561632C-L1H SAMSUNG [Samsung semiconductor], K4S561632C-L1H Datasheet - Page 2

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K4S561632C-L1H

Manufacturer Part Number
K4S561632C-L1H
Description
256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM
Manufacturer
SAMSUNG [Samsung semiconductor]
Datasheet
K4S561632C
Revision History
Revision 0.1 (Feb. 15, 2001)
• Added DC charcteristics.
Revision 0.2 (Mar. 06, 2001)
• Deleted "Preliminary"
• Changed DC charcteristics
Revision 0.3 (Jun 04, 2001)
• Corrected typo in DC characteristics
Revision 0.4 (Sep. 06, 2001)
< Before >
< After >
Redefined IDD1 & IDD4 in DC Characteristics
Changed the Notes in Operating AC Parameter.
5. For 1H/1L, tRDL=1CLK and tDAL=1CLK+tRP is also supported .
5.In 100MHz and below 100MHz operating conditions, tRDL=1CLK and tDAL=1CLK + 20ns is also supported.
SAMSUNG recommends tRDL=2CLK and tDAL=2CLK + tRP.
SAMSUNG recommends tRDL=2CLK and tDAL=2CLK + tRP.
Rev. 0.4 Sept. 2001
CMOS SDRAM

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