K4S561632C-L1H SAMSUNG [Samsung semiconductor], K4S561632C-L1H Datasheet - Page 6

• Manufacturer Part Number: K4S561632C-L1H
• Description: 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM
• Manufacturer: SAMSUNG [Samsung semiconductor]

Notes :
(Recommended operating condition unless otherwise noted, T
Operating current
(One bank active)
Precharge standby cur-
rent in power-down mode
Precharge standby cur-
rent in non power-down
mode
Active standby current in
power-down mode
Active standby current in
non power-down mode
(One bank active)
Operating current
(Burst mode)
Refresh current
Self refresh current
DC CHARACTERISTICS
K4S561632C
1. Measured with outputs open.
2. Refresh period is 64ms.
3. K4S561632C-TC**
4. K4S561632C-TL**
5. Unless otherwise noticed, input swing level is CMOS(V
Parameter
Symbol
I
I
I
I
CC2
CC3
CC2
I
CC3
I
I
I
CC2
CC2
CC3
CC3
I
I
I
I
CC1
CC4
CC5
CC6
PS
NS
PS
NS
P
N
P
N
Burst length = 1
t
I
CKE
CKE & CLK
CKE
Input signals are changed one time during 20ns
CKE
Input signals are stable
CKE
CKE & CLK
CKE
Input signals are changed one time during 20ns
CKE
Input signals are stable
I
Page burst
4banks Activated.
t
t
CKE
RC
O
O
CCD
RC
= 0 mA
= 0 mA
= 2CLKs
t
t
RC
RC
V
V
V
V
V
V
0.2V
IH
IH
IH
IH
(min)
(min)
IL
IL
(max), t
(max), t
(min), CS
(min), CLK
(min), CS
(min), CLK
V
V
IL
IL
Test Condition
(max), t
(max), t
CC
CC
= 10ns
= 10ns
A
V
V
IH
= 0 to 70 C)
IH
V
IH
V
/V
CC
CC
IL
IL
(min), t
(min), t
IL
(max), t
(max), t
=V
=
=
DDQ
CC
CC
CC
CC
/V
= 10ns
= 10ns
SSQ
=
=
).
C
L
150
180
220
-60
110
140
220
-7C
Version
100
140
200
1.5
-75
20
10
30
25
Rev. 0.4 Sept. 2001
2
2
6
6
3
CMOS SDRAM
-1H
100
130
190
100
130
190
-1L
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
Note
1
1
2
3
4