SDU9916 SAMHOP [SamHop Microelectronics Corp.], SDU9916 Datasheet
SDU9916
Manufacturer Part Number
SDU9916
Description
N-Channel E nhancement Mode F ield E ffect Transistor
Manufacturer
SAMHOP [SamHop Microelectronics Corp.]
Datasheet
1.SDU9916.pdf
(5 pages)
S amHop Microelectronics C orp.
N-C hannel E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
THE R MAL C HAR AC TE R IS TIC S
V
ABS OLUTE MAXIMUM R ATINGS (T
20V
DS S
Drain-S ource Voltage
Gate-S ource Voltage
Drain-S ource Diode Forward C urrent
Maximum P ower Dissipation
Operating and S torage Temperature R ange
Thermal R esistance, Junction-to-C ase
Thermal R esistance, Junction-to-Ambient
Drain C urrent-C ontinuous
20A
I
D
P arameter
-P ulsed
G
S DU S E R IE S
TO-252AA(D-P AK)
R
S
DS (ON) ( m
35 @ V
25 @ V
Derate above 25 C
a
D
@ TJ=125 C
G S
@ Tc=25 C
G S
W
= 2.7V
= 4.5V
) T Y P
S DD S E R IE S
TO-251(l-P AK)
A
1
=25 C unless otherwise noted)
T
S ymbol
J
R
R
F E AT UR E S
V
, T
V
I
P
DM
I
I
GS
DS
S uper high dense cell design for low R
R ugged and reliable.
D
S
TO-252 and TO-251 P ackage.
D
S TG
JC
JA
S DU/D9916
-55 to 150
G
Limit
0.4
12
20
60
20
20
50
50
3
D
S
DS (ON
Augus t , 2002
Unit
W / C
W
C
C
V
V
A
A
A
C
/W
/W
).
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SDU9916 Summary of contents
Page 1
S amHop Microelectronics C orp. N-C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR (ON 20V 20A ...
Page 2
E LE CTR ICAL CHAR ACTE R IS TICS (T Parameter OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage b ON CHAR ACTE R IS TICS Gate Threshold Voltage Drain-S ource ...
Page 3
S DU/D9916 E LE CTR ICAL CHAR ACTE R IS TICS (T Parameter DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS Diode Forward Voltage Notes a.S urface Mounted Board, t 10sec. b.Pulse Test:Pulse Width 300us, ...
Page 4
1.06 I =250uA D 1.03 1.00 0.97 0.94 0.91 -50 - 100 125 150 unction T emperature ( igure 5. G ate T hres hold V ...
Page 5
igure 11. S witching ircuit 2 1 D=0.5 0.2 0.1 0.1 0.05 0.02 0.01 S ING LE P ULS ...