SSD01N60 SECOS [SeCoS Halbleitertechnologie GmbH], SSD01N60 Datasheet
SSD01N60
Manufacturer Part Number
SSD01N60
Description
N-Channel Enhancement Mode Power Mos.FET
Manufacturer
SECOS [SeCoS Halbleitertechnologie GmbH]
Datasheet
1.SSD01N60.pdf
(5 pages)
01-Jun-2002 Rev. A
http://www.SeCoSGmbH.com/
Description
The SSD01N60 provide the designer with the best combination
of fast switching.
The TO-252 is universally preferred for all commercial-industrial
surface mount applications and suited for AC/DC converters.
Features
* Simple Drive Requirement
* Fast Switching
* Repetitive Avalanche Rated
* Dynamic dv/dt Rating
Thermal Data
Absolute Maximum Ratings
Total Power Dissipation
Single Pulse Avalanche Energy
Repetitive Avalanche Energy
Operating Junction and Storage Temperature Range
Linear Derating Factor
Avalanche Current
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current,V
Continuous Drain Current,V
Pulsed Drain Current
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Elektronische Bauelemente
1
Parameter
Parameter
GS
GS
@10V
@10V
2
G
D
S
RoHS Compliant Product
Max.
Max.
P
I
I
D
D
D
@T
@T
@T
Tj, Tstg
Symbol
Symbol
Rthj-c
Rthj-a
E
E
V
I
V
I
DM
AR
AS
AR
N-Channel Enhancement Mode Power Mos.FET
C
C
G S
DS
C
=25
=100
=25
o
C
o
o
C
C
REF.
A
B
C
D
E
S
F
1.6A, 600V,R
SSD01N60
Min.
6.40
5.20
6.80
2.20
0.70
0.60
Millimeter
2.30 REF.
-55~+150
Ratings
Ratings
Any changing of specification will not be informed individual
± 20
110
600
3 2 .
0.31
1.6
1.6
13
39
0.5
1
6
Max.
6.80
5.50
7.20
2.80
0.90
0.90
TO-252
DS(ON)
REF.
G
M
H
K
R
J
L
8
Ω
Min.
0.50
2.20
0.45
0.90
5.40
0.80
0
Millimeter
o
W / C
o
C
C
Unit
Unit
V
mJ
V
mJ
A
A
W
o
Max.
A
A
0.70
2.40
0.55
0.15
1.50
5.80
1.20
/W
/W
C
o
Page 1 of 5
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