SSD01N60 SECOS [SeCoS Halbleitertechnologie GmbH], SSD01N60 Datasheet - Page 2

• Manufacturer Part Number: SSD01N60
• Description: N-Channel Enhancement Mode Power Mos.FET
• Manufacturer: SECOS [SeCoS Halbleitertechnologie GmbH]

01-Jun-2002 Rev. A
http://www.SeCoSGmbH.com/
Notes: 1. Pulse width limited by safe operating area.
Continuous Source Current(Body Diode)
Pulsed Source Current(Body Diode)
Electrical Characteristics( Tj=25 C Unless otherwise specified)
Rise Time
Turn-off Delay Time
Source-Drain Diode
Forward On Voltage
Gate Threshold Voltage
Gate-Source Leakage Current
Drain-Source Leakage Current (Tj=25 )
Forward Transconductance
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Fall Time
Input Capacitance
Reverse Transfer Capacitance
Breakdown Voltage Temp. Coefficient
Drain-Source Leakage Current(Tj=150 )
Static Drain-Source On-Resistance
Total Gate Charge
Gate-Source Charge
Output Capacitance
Drain-Source Breakdown Voltage
2. Staring Tj=25 : , V
3. Pulse width 300us, duty cycle 2%.
Elektronische Bauelemente
Parameter
Parameter
3
3
3
DD
=50V, L=10mH, R
1
o
C
o
C
Symbol
BV
o
Symbol
R
Td
BV
Td
V
Crss
V
Ciss
Coss
D S (O N )
I
I
Gfs
DS
I
Qg
Qgs
Qgd
I
GS(th)
S
SM
T f
GSS
Tr
DSS
SD
(ON)
(Off)
DSS
/ Tj
G
=25 Ł , I
Min.
Min.
600
2.0
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
AS
=1.6A.
N-Channel Enhancement Mode Power Mos.FET
Typ.
Typ.
286
0.6
7.7
7.2
0.8
1.5
2.6
14
25
_
_
_
_
_
5
_
_
8
5
7
_
Max.
±
Max.
100
100
500
1.6A, 600V,R
1.5
8.0
1.6
4.0
_
_
_
_
_
_
_
_
_
6
_
_
_
SSD01N60
Any changing of specification will not be informed individual
Unit
V/
nA
uA
uA
Unit
V
Ω
V
V
A
A
S
nC
pF
nS
o
C
DS(ON)
I
V
S
Reference to 25 C , I
V
V
V
V
V
V
V
R
Test Condition
=1.6A
V
V
V
I
R
D
I
V
V
V
Test Condition
D
f=1.0MHz
D
DS
GS
DS
DS
GS
DD
GS
GS
DS
DS
G
=V
GS
=1.6A
D
=1.6A
GS
DS
=10
=187.5
=V
=60 0V,V
=480 V,V
= 20V
=10V, I
=300V
=10V
=0V, I
=50V, I
=480V
= 10V
=0V
=25V
±
G
8
GS,
=0V,V
, V
Ω
Ω
I
D
D
GS
Ω
=250uA
=250uA
D
D
=0.8A
=0.8A
=0V.Tj=25C
GS
GS
S
=0
=0
=1.5 V
o
D
= 1mA
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o